STP17NK40Z STMicroelectronics, STP17NK40Z Datasheet - Page 2

• Manufacturer Part Number: STP17NK40Z
• Description: MOSFET N-CH 400V 15A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP17NK40Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 7.5A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 230mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.25 Ohms
• Forward Transconductance Gfs (max / Min): 10.6 S
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 15 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STP17NK40Z - STP17NK40ZFP
ABSOLUTE MAXIMUM RATINGS
(
(1) I
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/10
l
) Pulse width limited by safe operating area
V
Rthj-case
Rthj-amb
dv/dt (1)
Symbol
Symbol
Symbol
SD
BV
ESD(G-S)
I
V
DM
P
Viso
V
V
E
T
I
I
DGR
I
I
TOT
GS
AR
T
T
stg
GSO
DS
GS
AS
D
D
15A, di/dt 200A/µs, V
j
l
(
l
)
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate-source Current (DC)
Gate source ESD(HBM-C=100pF, R=1.5K
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
Parameter
j
DD
= 25 °C, I
V
(BR)DSS
Parameter
D
C
GS
= I
= 25°C
, T
GS
j
= 20 k )
max)
AR
j
Parameter
= 0)
T
, V
JMAX.
DD
C
C
Igs=± 1mA (Open Drain)
= 25°C
= 100°C
= 50 V)
Test Conditions
STP17NK40Z
150
9.4
1.2
15
60
--
TO-220
0.83
-55 to 150
-55 to 150
Value
Min.
4500
± 30
± 20
400
400
30
4.5
62.5
300
Max Value
STP17NK40ZFP
450
Typ.
15
TO-220FP
9.4 (*)
15 (*)
60 (*)
2500
0.28
35
3.6
Max.
Unit
W/°C
°C/W
°C/W
Unit
V/ns
Unit
mJ
mA
°C
°C
°C
A
W
V
V
V
V
A
A
A
V
V