IRF3205ZSPBF International Rectifier, IRF3205ZSPBF Datasheet

IRF3205ZSPBF

Manufacturer Part Number

IRF3205ZSPBF

Description

MOSFET N-CH 55V 75A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRF3205ZLPBF.pdf (12 pages)

2.IRF3205ZSPBF.pdf (4 pages)

Specifications of IRF3205ZSPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

6.5 mOhm @ 66A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

75A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

110nC @ 10V

Input Capacitance (ciss) @ Vds

3450pF @ 25V

Power - Max

170W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Current, Drain

75 A

Gate Charge, Total

76 nC

Package Type

D2Pak

Polarization

N-Channel

Power Dissipation

170 W

Resistance, Drain To Source On

4.9 Milliohms

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

45 ns

Time, Turn-on Delay

18 ns

Transconductance, Forward

71 S

Voltage, Breakdown, Drain To Source

55 V

Voltage, Forward, Diode

1.3 V

Voltage, Gate To Source

±20 V

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

6.5 m Ohms

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

110 A

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Fall Time

67 ns

Gate Charge Qg

76 nC

Minimum Operating Temperature

- 55 C

Rise Time

95 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRF3205ZSPBF

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Description

This HEXFET

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating. These features combine

to make this design an extremely efficient and

reliable device for use in a wide variety of

applications.

Features

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

AS (Thermally limited)

STG

θJC

θCS

θJA

@ T

(Tested )

Lead-Free

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

= 25°C Continuous Drain Current, V

= 100°C Continuous Drain Current, V

= 25°C Continuous Drain Current, V

= 25°C Power Dissipation

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount)

Power MOSFET utilizes the latest

Parameter

@ 10V

(Silicon Limited)

(Package Limited)

IRF3205ZPbF

TO-220AB

See Fig.12a, 12b, 15, 16

Typ.

HEXFET

300 (1.6mm from case )

0.50

–––

IRF3205ZSPbF

10 lbf

-55 to + 175

Max.

in (1.1N

Pak

110

440

170

± 20

180

250

1.1

IRF3205ZSPbF

IRF3205ZLPbF

IRF3205ZPbF

Power MOSFET

DS(on)

Max.

0.90

–––

DSS

IRF3205ZLPbF

= 75A

PD - 95129A

= 6.5mΩ

TO-262

= 55V

Units

W/°C

°C/W

°C

Related parts for IRF3205ZSPBF

IRF3205ZSPBF Summary of contents

Page 1

... Parameter 95129A IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF ® HEXFET Power MOSFET 55V DSS R = 6.5mΩ DS(on 75A Pak TO-262 IRF3205ZSPbF IRF3205ZLPbF Max. Units 110 440 170 W 1.1 W/°C ± 180 mJ 250 See Fig.12a, 12b 175 °C 300 (1.6mm from case ) lbf in (1.1N m) Typ ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 25°C 100 25V 20µs PULSE WIDTH 1 4.0 ...

Page 4

0V MHZ C iss = SHORTED C rss = C gd 5000 C oss = 4000 Ciss 3000 2000 1000 ...

Page 5

LIMITED BY PACKAGE 100 100 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 0.1 1.0E-08 1.0E-07 1.0E-06 Fig 15. Typical Avalanche Current Vs.Pulsewidth 200 TOP Single Pulse BOTTOM 10% Duty Cycle 66A 160 120 ...

Page 8

D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead - Free" TO-220AB package is ...

Page 10

T HIS IS AN IRF530S WIT H LOT CODE 8024 ASSE MB LED ON WW 02, 2000 IN THE AS SEMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE : T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 ASSEMBLY LINE "C" Note: "P" in assembly line ...

Page 12

D Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ ...

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