IRLR2703PBF International Rectifier, IRLR2703PBF Datasheet - Page 2

• Manufacturer Part Number: IRLR2703PBF
• Description: MOSFET N-CH 30V 23A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR2703PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current, Drain: 23 A
• Gate Charge, Total: 15 nC
• Package Type: D-Pak (TO-252AA)
• Polarization: N-Channel
• Power Dissipation: 45 W
• Resistance, Drain To Source On: 0.045 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 12 ns
• Time, Turn-on Delay: 8.5 ns
• Transconductance, Forward: 6.4 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±16 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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‚
ƒ
„
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
L
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
t
L
C
C
C
I
I
V
t
Q
t
DSS
GSS
d(on)
d(off)
SM
on
r
f
S
rr
D
fs
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
SD
g
gs
gd
rr
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
V
I
2
max. junction temperature. ( See fig. 11 )
R
T
(BR)DSS
SD
DD
J
G
≤ 175°C
≤ 14A, di/dt ≤ 140A/µs, V
= 25Ω, I
= 15V, starting T
/∆T
J
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Source Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
AS
= 14A. (See Figure 12)
J
= 25°C, L =570µH
Parameter
Parameter
DD
≤ V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
6.4
–––
Min. Typ. Max. Units
–––
30
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
…
†
between
‡
This is applied for I-PAK, L
Uses IRL2703 data and test conditions.
Caculated continuous current based on maximum allowable
0.030 –––
Typ. Max. Units
–––
––– 0.045
––– 0.065
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
140
450
210
110
–––
–––
–––
140
junction temperature;
8.5
7.5
4.5
12
20
65
–––
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
23 …
210
4.6
9.3
1.3
25
15
–––
97
96
lead and center of die contact.
V/°C
µA
nA
nC
nH
nC
pF
ns
ns
Ω
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact†
V
V
ƒ = 1.0MHz, See Fig. 5‡
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „‡
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
= 14A
= 14A
= 25°C, I
= 25°C, I
= 1.0Ω, See Fig. 10 „‡
= 12Ω, V
Package limitation current = 20A.
= V
= 25V, I
= 30V, V
= 24V, V
= 24V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 16V
= -16V
= 4.5V, See Fig. 6 and 13 „‡
= 15V
= 0V
S
of D-PAK is measured
GS
, I
D
S
F
D
D
GS
D
Conditions
= 250µA
D
GS
GS
Conditions
= 14A, V
= 14A
= 250µA
= 14A‡
= 14A „
= 12A „
= 4.5V
= 0V
= 0V, T
D
www.irf.com
GS
= 1mA
J
= 150°C
= 0V
G
G
S
+L
„
D
D
S
)
S
D