BUK764R0-55B,118 NXP Semiconductors, BUK764R0-55B,118 Datasheet
BUK764R0-55B,118
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BUK764R0-55B,118 Summary of contents
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... BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 5 — 22 April 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...
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... see Figure 13 Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK764R0-55B N-channel TrenchMOS standard level FET Min Typ ≤ sup = °C; j Graphic symbol ...
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... Figure °C; see Figure °C mb ≤ 10 µs; T pulsed ° ≤ sup °C; unclamped GS j(init) see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK764R0-55B Min Max - -20 20 [1] Figure [2][3] - 193 [1] Figure 774 - 300 -55 175 -55 175 ...
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... T (°C) mb Fig ( All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK764R0-55B N-channel TrenchMOS standard level FET 100 150 Normalized total power dissipation as a function of mounting base temperature 003aab677 (1) (2) ( (ms) AL 03na19 200 T (°C) mb © NXP B.V. 2011. All rights reserved. ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK764R0-55B Product data sheet = (1) 1 Conditions see Figure 5 mounted on a printed-circuit board; minimum footprint - All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK764R0-55B N-channel TrenchMOS standard level FET (V) DS Min Typ - - - ...
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... °C j from source lead to source bond pad ° ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK764R0-55B Min Typ Max Unit 4 500 µA - 0.02 1 µ ...
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... V ( (V) DS Fig 7. 03aa35 typ max (V) GS Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK764R0-55B N-channel TrenchMOS standard level FET 7 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values 120 g fs (S) 100 ...
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... Fig 11. Gate-source threshold voltage as a function of 03ne89 V GS (V) 120 180 ( ° Fig 13. Gate-source voltage as a function of turn-on All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK764R0-55B N-channel TrenchMOS standard level FET 5 4 max 3 typ 2 min 1 0 −60 0 ...
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... C iss C oss C rss (V) DS Fig 15. Reverse diode current as a function of reverse All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK764R0-55B N-channel TrenchMOS standard level FET 175 ° 0.0 0.2 0.4 0.6 diode voltage; typical values 03nh17 = 25 ° ...
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... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK764R0-55B N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2011. All rights reserved. ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK764R0-55B separated from data sheet BUK75_764R0-55B_4. BUK75_764R0-55B_4 20071004 BUK764R0-55B Product data sheet ...
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... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK764R0-55B N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK764R0-55B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 22 April 2011 Document identifier: BUK764R0-55B ...