IRF9540 Vishay, IRF9540 Datasheet - Page 4

• Manufacturer Part Number: IRF9540
• Description: MOSFET P-CH 100V 19A TO-220AB
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF9540

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -19A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.2Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 19A
• Power Dissipation: 150W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 57 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 73 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRF9540

IRF9540, SiHF9540
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91078_06
91078_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
3000
2500
2000
1500
1000
500
20
16
12
8
4
0
0
10
0
I
0
D
= - 19 A
- V
10
DS ,
Q
G
, Total Gate Charge (nC)
Drain-to-Source Voltage (V)
V
20
DS
= - 20 V
V
C
C
C
GS
iss
rss
oss
V
30
DS
= 0 V, f = 1 MHz
= C
= C
= C
= - 50 V
10
gs
gd
ds
1
+ C
+ C
40
V
DS
gd
gd
For test circuit
see figure 13
, C
This datasheet is subject to change without notice.
= - 80 V
C
C
C
ds
iss
oss
rss
50
Shorted
60
91078_07
91078_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
0.1
10
1
0
2
3
5
2
5
2
5
2
5
2
1
0.0
0.1
Fig. 8 - Maximum Safe Operating Area
2
- V
- V
5
1.0
DS
SD
Operation in this area limited
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
1
175
2
T
T
Single Pulse
°
2.0
C
C
J
by R
= 175 °C
= 25 °C
5
10
DS(on)
S11-0512-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
2
Document Number: 91078
3.0
25
°
C
5
10
100
1
10
2
4.0
V
ms
2
ms
GS
µs
= 0 V
5
5.0
10
3