IRF840 Vishay, IRF840 Datasheet - Page 5

• Manufacturer Part Number: IRF840
• Description: MOSFET N-CH 500V 8A TO-220AB
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF840

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.85Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 8A
• Power Dissipation: 125W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.85 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF840; IRF840IR

Document Number: 91065
S-81275-Rev. A, 16-Jun-08
91065_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
Vary t
required I
8.0
6.0
4.0
2.0
0.0
91065_11
Fig. 12a - Unclamped Inductive Test Circuit
25
p
to obtain
10
AS
0.1
10
-2
1
10
R
10 V
50
T
-5
G
0.05
0.02
0.01
0 − 0.5
0.2
0.1
C
, Case Temperature (°C)
V
DS
t
p
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T
100
0.01 Ω
L
10
-4
Single Pulse
(Thermal Response)
125
t
1
150
+
-
, Rectangular Pulse Duration (S)
V
DD
10
-3
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
DS
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
Notes:
1. Duty Factor, D = t
2. Peak T
GS
t
d(on)
V
IRF840A, SiHF840A
0.1
DS
t
r
j
= P
t
P
p
DM
DM
D.U.T.
x Z
t
1
1
thJC
Vishay Siliconix
R
/t
D
2
t
d(off)
t
V
+ T
2
DS
C
1
t
f
V
+
-
www.vishay.com
DD
V
DD
5