SUM110P08-11L-E3 Vishay, SUM110P08-11L-E3 Datasheet
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Manufacturer Part Number
SUM110P08-11L-E3
Description
MOSFET P-CH 80V 110A D2PAK
Specifications of SUM110P08-11L-E3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11.2 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
270nC @ 10V
Input Capacitance (ciss) @ Vds
10850pF @ 40V
Power - Max
375W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 50 C
Configuration
Single
Resistance Drain-source Rds (on)
0.0112 Ohm @ 10 V
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
23.5 A
Power Dissipation
13600 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-11A
Drain Source Voltage Vds
-80V
On Resistance Rds(on)
14.5mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.0112Ohm
Drain-source On-volt
80V
Gate-source Voltage (max)
±20V
Operating Temp Range
-50C to 175C
Operating Temperature Classification
Automotive
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM110P08-11L-E3
Available stocks
Part Number:
SUM110P08-11L-E3
Part Number:
SUM110P08-11L-E3
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under Steady State conditions is °C/W.
Document Number: 73472
S-70309-Rev. B, 12-Feb-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
DS
- 80
(V)
Ordering Information: SUM110P08-11 (Lead (Pb)-free)
G
0.0111 at V
Top View
TO-263
D
r
DS(on)
S
GS
(Ω)
J
= - 10 V
= 150 °C)
b, d
Drain Connected to Tab
P-Channel 80-V (D-S) MOSFET
I
D
- 110
(A)
b
A
Q
= 25 °C, unless otherwise noted
Steady State
113 nC
T
T
T
T
L = 0.1 mH
g
T
T
T
T
T
T
t ≤ 10 sec
C
A
C
A
C
A
C
A
C
A
(Typ)
New Product
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
FEATURES
• TrenchFET
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJA
thJC
GS
DS
AS
D
S
D
stg
®
Power MOSFET
Typical
0.33
8
- 55 to 175
G
23.5
13.6
13.6
4.5
Limit
- 9
- 120
110
110
± 20
- 80
- 75
281
375
125
P-Channel MOSFET
71
b, c
b, c
b, c
b, c
b, c
a
a
SUM110P08-11
Maximum
S
D
0.4
11
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1
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SUM110P08-11L-E3 Summary of contents
... DS DS(on) 0.0111 TO-263 Drain Connected to Tab Top View Ordering Information: SUM110P08-11 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...
... SUM110P08-11 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
... Q - (nC) g Gate Charge Document Number: 73472 S-70309-Rev. B, 12-Feb-07 New Product 15000 12000 = 6 V 9000 6000 = 10 V 3000 60 80 100 = 64 V 160.0 200.0 SUM110P08-11 Vishay Siliconix ° 125 ° ° (V) GS Transfer Characteristics C iss C oss C rss 0 ...
... SUM110P08-11 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.3 0 (V) SD Source-Drain Diode Forward Voltage 1 0.8 0.5 0.2 - 0 (°C) J Threshold Voltage 400 350 300 250 200 150 100 100 T C Power Derating (Junction-to-Case) www.vishay.com 4 New Product 25 ° ...
... Normalized Thermal Transient Impedance, Junction-to-Case = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi- SUM110P08-11 Vishay Siliconix 1 0.0001 0.001 0.01 0.1 tin - (Sec) Avalanche Current vs. Time 0.1 www.vishay.com 1.0 ...
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...
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