This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... R is determined with the device mounted on a 1in θJA the user's board design. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. ° 3: Starting 3mH 15A FDMS5672 Rev. 25°C unless otherwise noted J Test Conditions I = 250µ 250µA, referenced to 25° 48V, V ...
... TIME IN AVALANCHE(ms) AV Figure 9. Unclamped Inductive Switching Capability 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY r SINGLE PULSE 0.01 DS(on MAX RATED 1E-3 0 DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMS5672 Rev. 25°C unless otherwise noted J 4000 = 20V 1000 V = 40V DD 100 ...
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMS5672 Rev. C2 FPS™ PDP-SPM™ ® ® FRFET Power220 ® SM Global Power Resource Power247 Green FPS™ ...