FDMS5672 Fairchild Semiconductor, FDMS5672 Datasheet

MOSFET N-CH 60V 10.6A POWER56

FDMS5672

Manufacturer Part Number
FDMS5672
Description
MOSFET N-CH 60V 10.6A POWER56
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of FDMS5672

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11.5 mOhm @ 10.6A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
10.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
2800pF @ 30V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-MLP, Power56
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0115 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
26 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10.6 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS5672TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS5672
Manufacturer:
Fairchild Semiconductor
Quantity:
26 448
Part Number:
FDMS5672
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDMS5672
0
©2006 Fairchild Semiconductor Corporation
FDMS5672 Rev.C2
FDMS5672
N-Channel UltraFET Trench
60V, 22A, 11.5mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
θJC
θJA
Max r
Max r
Typ Qg = 32nC at V
Low Miller Charge
Optimized efficiency at high frequencies
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMS5672
DS(on)
DS(on)
Pin 1
= 11.5mΩ at V
= 16.5mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
Power 56 (Bottom view)
= 10V
D
GS
GS
S
D
= 10V, I
= 6V, I
FDMS5672
-Continuous
-Continuous (Silicon limited)
-Pulsed
S
Device
D
D
S
D
D
= 8A
= 10.6A
G
T
A
= 25°C unless otherwise noted
Parameter
Power 56
Package
®
1
MOSFET
T
T
T
T
T
General Description
UItraFET
benchmark efficiency in power conversion applications.
Optimized for r
these devices are ideal for high frequency DC to DC converters.
Application
C
C
A
C
A
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
DC - DC Conversion
D
D
D
D
5
6
7
8
Reel Size
devices
13’’
DS(on)
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
, low ESR, low total and Miller gate charge,
combine
Tape Width
12mm
characteristics
-55 to +150
Ratings
4
3
2
1
10.6
±20
337
2.5
1.6
60
22
65
60
78
50
G
S
S
S
December 2007
www.fairchildsemi.com
3000 units
that
Quantity
Units
°C/W
enable
mJ
°C
W
V
V
A
tm

Related parts for FDMS5672

FDMS5672 Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS5672 FDMS5672 ©2006 Fairchild Semiconductor Corporation FDMS5672 Rev.C2 ® MOSFET General Description = 10.6A UItraFET D benchmark efficiency in power conversion applications Optimized for r these devices are ideal for high frequency converters. ...

Page 2

... R is determined with the device mounted on a 1in θJA the user's board design. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. ° 3: Starting 3mH 15A FDMS5672 Rev. 25°C unless otherwise noted J Test Conditions I = 250µ 250µA, referenced to 25° 48V, V ...

Page 3

... T , JUNCTION TEMPERATURE J Figure 3. Normalized On Resistance vs Junction Temperature 60 PULSE DURATION = 80 µ s DUTY CYCLE = 0.5%MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMS5672 Rev. 25°C unless otherwise noted J PULSE DURATION = 80 µ s DUTY CYCLE = 0.5%MAX 100 125 150 - ...

Page 4

... TIME IN AVALANCHE(ms) AV Figure 9. Unclamped Inductive Switching Capability 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY r SINGLE PULSE 0.01 DS(on MAX RATED 1E-3 0 DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMS5672 Rev. 25°C unless otherwise noted J 4000 = 20V 1000 V = 40V DD 100 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 SINGLE PULSE 5E FDMS5672 Rev. 25°C unless otherwise noted RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJA θ www.fairchildsemi.com ...

Page 6

... FDMS5672 Rev.C2 6 www.fairchildsemi.com ...

Page 7

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMS5672 Rev. C2 FPS™ PDP-SPM™ ® ® FRFET Power220 ® SM Global Power Resource Power247 Green FPS™ ...

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