IXTK90N25L2 IXYS, IXTK90N25L2 Datasheet - Page 4

MOSFET N-CH 90A 250V TO-264

IXTK90N25L2

Manufacturer Part Number
IXTK90N25L2
Description
MOSFET N-CH 90A 250V TO-264
Manufacturer
IXYS
Series
Linear L2™r
Datasheet

Specifications of IXTK90N25L2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
33 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4.5V @ 3mA
Gate Charge (qg) @ Vgs
640nC @ 10V
Input Capacitance (ciss) @ Vds
23000pF @ 25V
Power - Max
960W
Mounting Type
Through Hole
Package / Case
TO-264
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
90
Rds(on), Max, Tj=25°c, (?)
0.033
Ciss, Typ, (pf)
23000
Qg, Typ, (nc)
640
Trr, Typ, (ns)
266
Pd, (w)
960
Rthjc, Max, (k/w)
0.13
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTK90N25L2
Manufacturer:
ST
Quantity:
20 000
IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
160
140
120
100
280
240
200
160
120
100
80
60
40
20
80
40
0
0
3.5
0.3
0
0.4
4.0
f
5
= 1 MHz
0.5
Fig. 9. Forward Voltage Drop of
4.5
10
T
0.6
Fig. 7. Input Admittance
Fig. 11. Capacitance
J
5.0
= 125ºC
0.7
Intrinsic Diode
15
V
V
5.5
V
DS
GS
SD
0.8
- Volts
- Volts
- Volts
6.0
20
0.9
T
T
J
J
6.5
= 25ºC
= 125ºC
25
1.0
- 40ºC
25ºC
C iss
C oss
C rss
7.0
1.1
30
7.5
1.2
35
8.0
1.3
1.4
8.5
40
1.000
0.100
0.010
0.001
120
110
100
90
80
70
60
50
40
30
20
10
16
14
12
10
0.00001
0
8
6
4
2
0
0
0
V
I
I
D
G
100
DS
= 45A
= 10mA
Fig. 12. Maximum Transient Thermal
20
0.0001
= 125V
200
Fig. 8. Transconductance
40
300
Fig. 10. Gate Charge
Q
0.001
Pulse Width - Seconds
G
- NanoCoulombs
I
D
400
Impedance
60
- Amperes
0.01
500
80
600
T
IXTK90N25L2
IXTX90N25L2
J
100
0.1
= - 40ºC
700
120
800
25ºC
1
125ºC
900
140
1000
10

Related parts for IXTK90N25L2