IXTK90N25L2 IXYS, IXTK90N25L2 Datasheet - Page 4

• Manufacturer Part Number: IXTK90N25L2
• Description: MOSFET N-CH 90A 250V TO-264
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTK90N25L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 33 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4.5V @ 3mA
• Gate Charge (qg) @ Vgs: 640nC @ 10V
• Input Capacitance (ciss) @ Vds: 23000pF @ 25V
• Power - Max: 960W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 90
• Rds(on), Max, Tj=25°c, (?): 0.033
• Ciss, Typ, (pf): 23000
• Qg, Typ, (nc): 640
• Trr, Typ, (ns): 266
• Pd, (w): 960
• Rthjc, Max, (k/w): 0.13
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
160
140
120
100
280
240
200
160
120
100
80
60
40
20
80
40
0
0
3.5
0.3
0
0.4
4.0
f
5
= 1 MHz
0.5
Fig. 9. Forward Voltage Drop of
4.5
10
T
0.6
Fig. 7. Input Admittance
Fig. 11. Capacitance
J
5.0
= 125ºC
0.7
Intrinsic Diode
15
V
V
5.5
V
DS
GS
SD
0.8
- Volts
- Volts
- Volts
6.0
20
0.9
T
T
J
J
6.5
= 25ºC
= 125ºC
25
1.0
- 40ºC
25ºC
C iss
C oss
C rss
7.0
1.1
30
7.5
1.2
35
8.0
1.3
1.4
8.5
40
1.000
0.100
0.010
0.001
120
110
100
90
80
70
60
50
40
30
20
10
16
14
12
10
0.00001
0
8
6
4
2
0
0
0
V
I
I
D
G
100
DS
= 45A
= 10mA
Fig. 12. Maximum Transient Thermal
20
0.0001
= 125V
200
Fig. 8. Transconductance
40
300
Fig. 10. Gate Charge
Q
0.001
Pulse Width - Seconds
G
- NanoCoulombs
I
D
400
Impedance
60
- Amperes
0.01
500
80
600
T
IXTK90N25L2
IXTX90N25L2
J
100
0.1
= - 40ºC
700
120
800
25ºC
1
125ºC
900
140
1000
10