IXFC30N60P IXYS, IXFC30N60P Datasheet
IXFC30N60P
Specifications of IXFC30N60P
Related parts for IXFC30N60P
IXFC30N60P Summary of contents
Page 1
... ± GSS DSS DS DSS DS(on Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFC 30N60P IXFR 30N60P Maximum Ratings 600 = 1 MΩ 600 GS ±30 ± 1.5 ≤ DSS 166 -55 ... +150 150 -55 ... +150 300 2500 11..65 / 2.5..15 20 ...
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... I = 25A, -di/dt = 100 A/μ 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C unless otherwise specified) J Min. Typ. Max 3820 ...
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... olts D S Fig Nor m alize d to DS(on 15A V alue ain Cur 2 10V GS 2.6 2.4 2.2 2 1.8 1.6 1.4 1 mperes D © 2006 IXYS All rights reserved º 6. 5. º C 3.4 = 10V 3.1 7V 2.8 2.5 6V 2.2 5.5V 1.9 1.6 1.3 5V 0.7 4 ...
Page 4
... T = 125 0.4 0.5 0.6 0 olts S D Fig. 11. Capacitance 10000 f = 1MH z C iss 1000 C oss 100 olts D S IXYS reserves the right to change limits, test conditions, and dimensions 5 º 0.8 0 IXFC 30N60P IXFR 30N60P Fig. 8. Trans conductance º ...