IRLB8721PBF International Rectifier, IRLB8721PBF Datasheet

MOSFET N-CH 30V 62A TO-220AB

IRLB8721PBF

Manufacturer Part Number
IRLB8721PBF
Description
MOSFET N-CH 30V 62A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLB8721PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.7 mOhm @ 31A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
62A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
13nC @ 4.5V
Input Capacitance (ciss) @ Vds
1077pF @ 15V
Power - Max
65W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
16 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
62 A
Power Dissipation
65 W
Mounting Style
Through Hole
Gate Charge Qg
7.6 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLB8721PBF
Manufacturer:
INTERPON
Quantity:
67
Part Number:
IRLB8721PBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRLB8721PBF
Quantity:
9 000
Applications
l
l
l
Notes  through
Benefits
l
l
l
l
www.irf.com
V
V
I
I
I
P
P
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJC
θCS
θJA
@ T
@ T
and Current
for Telecom and Industrial Use
Converters with Synchronous Rectification
Optimized for UPS/Inverter Applications
High Frequency Synchronous Buck
High Frequency Isolated DC-DC
Very Low RDS(on) at 4.5V V
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
Lead-Free
@T
@T
Converters for Computer Processor Power
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
are on page 9
g
f
GS
Parameter
Parameter
GS
GS
g
g
@ 10V
@ 10V
V
30V 8.7m @V
DSS
Gate
G
IRLB8721PbF
R
HEXFET
DS(on)
300 (1.6mm from case)
D
Typ.
–––
–––
IRLB8721PbF
0.5
10lb
TO-220AB
Drain
-55 to + 175
GS
max
D
x
in (1.1N
Max.
0.43
± 20
®
250
= 10V
30
62
44
65
33
Power MOSFET
G
D
x
Max.
S
m)
–––
2.3
62
Qg (typ.)
Source
7.6nC
S
97390
Units
Units
4/22/09
W/°C
°C/W
°C
W
V
A
1

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IRLB8721PBF Summary of contents

Page 1

... DSS 30V 8. Gate Parameter @ 10V GS @ 10V Parameter f 97390 ® HEXFET Power MOSFET R max Qg (typ.) DS(on) = 10V 7.6nC TO-220AB IRLB8721PbF D S Drain Source Max. Units 30 V ± 250 0.43 W/°C - 175 °C 300 (1.6mm from case 10lb in (1.1N m) Typ. Max. Units ––– ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ΔΒV /ΔT Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ΔV /ΔT Gate Threshold Voltage Coefficient GS(th) ...

Page 3

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 175° 25° ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = Ciss 1000 Coss Crss 100 10 ...

Page 5

CaseTemperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) ...

Page 6

V GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage D.U 20V V GS 0.01 Ω Fig ...

Page 7

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 15. Current Regulator Same Type as D.U.T. 50KΩ .2μF 12V .3μ 3mA I G Current Sampling Resistors Fig 16a. Gate Charge ...

Page 8

TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com ...

Page 9

EXAMPLE: T HIS IS AN IRF 1010 LOT CODE 1789 AS SEMBLED ON WW 19, 2000 ASS EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead - Free" Note: For the most ...

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