FDD4685 Fairchild Semiconductor, FDD4685 Datasheet - Page 3

• Manufacturer Part Number: FDD4685
• Description: MOSFET P-CH 40V 8.4A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD4685

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 8.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 5V
• Input Capacitance (ciss) @ Vds: 2380pF @ 20V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.027 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.4 A
• Power Dissipation: 69000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD4685TR

FDD4685 Rev.B
Typical Characteristics
100
100
80
60
40
20
80
60
40
20
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Figure 3. Normalized On Resistance
Figure 1.
0
0
-50
0
Figure 5. Transfer Characteristics
1
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
I
D
T
GS
-25
vs Junction Temperature
J
=-8.4A
= 150
-V
-V
= -10V
T
J
DS
GS
2
, JUNCTION TEMPERATURE
On Region Characteristics
1
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
o
0
V
C
GS
= -10V
25
3
µ
µ
s
s
T
2
50
J
= -55
T
J
4
75
o
= 25°C unless otherwise noted
C
100
3
(
o
T
5
V
C
V
V
J
V
GS
)
GS
GS
125
= 25
GS
= -4.5V
= -4V
= -6V
= -3V
o
C
150
4
6
3
70
60
50
40
30
20
0.1
40
10
3.0
2.6
2.2
1.8
1.4
1.0
0.6
1
0.4
Figure 2.
2
Figure 4.
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
Figure 6.
V
GS
-V
T
J
-V
3
SD
= 0V
= 150
GS
V
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
GS
, GATE TO SOURCE VOLTAGE (V)
20
Normalized On-Resistance
o
= -3V
-I
On-Resistance vs Gate to
0.6
= -4.5V
4
C
D
I
Source Voltage
V
D
Source to Drain Diode
, DRAIN CURRENT(A)
GS
= -8.4A
= -4V
5
40
0.8
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
6
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
T
V
J
GS
60
7
= -55
= -6V
o
T
C
J
1.0
T
8
= 25
J
T
J
V
= 125
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80
= 25
GS
o
C
= -10V
9
o
o
µ
C
C
s
µ
s
10
1.2
100