NTJD2152PT1 ON Semiconductor, NTJD2152PT1 Datasheet

MOSFET 2P-CH 8V 775MA SOT-363

NTJD2152PT1

Manufacturer Part Number
NTJD2152PT1
Description
MOSFET 2P-CH 8V 775MA SOT-363
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTJD2152PT1

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 570mA, 4.5V
Drain To Source Voltage (vdss)
8V
Current - Continuous Drain (id) @ 25° C
775mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
4nC @ 4.5V
Input Capacitance (ciss) @ Vds
225pF @ 8V
Power - Max
270mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
NTJD2152PT1OS

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Part Number
Manufacturer
Quantity
Price
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Manufacturer:
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Quantity:
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Part Number:
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Manufacturer:
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Quantity:
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Company:
Part Number:
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Company:
Part Number:
NTJD2152PT1G
Quantity:
50
NTJD2152P
Trench Small Signal
MOSFET
8 V, Dual P−Channel, SC−88
ESD Protection
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current
(Based on R
Power Dissipation
(Based on R
Continuous Drain
Current
(Based on R
Power Dissipation
(Based on R
Pulsed Drain Current
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Junction−to−Ambient – Steady State
Junction−to−Lead (Drain) – Steady State
Leading –8 V Trench for Low R
ESD Protected Gate
Small Footprint (2 x 2 mm)
Same Package as SC−70−6
Pb−Free Packages are Available
Load Power switching
DC−DC Conversion
Li−Ion Battery Charging Circuits
Cell Phones, Media Players, Digital Cameras, PDAs
qJA
qJA
qJL
qJL
Parameter
)
)
)
)
Parameter
(T
Steady
Steady
Steady
Steady
J
State
State
State
State
= 25°C unless otherwise stated)
T
T
T
T
T
T
T
T
A
A
A
A
A
A
A
A
t ≤10 ms
DS(ON)
= 25 °C
= 85 °C
= 25 °C
= 85 °C
= 25 °C
= 85 °C
= 25 °C
= 85 °C
(Note 1)
Symbol
R
R
Performance
qJA
qJL
Symbol
V
T
V
I
T
P
P
DSS
DM
STG
T
I
I
I
GS
D
D
S
J
D
D
L
,
Typ
400
194
−0.775
−0.558
−0.775
−55 to
Value
−8.0
±8.0
0.27
0.14
−1.1
−0.8
0.55
0.29
±1.2
150
260
Max
460
226
1
°C/W
Unit
Unit
°
°C
W
W
V
V
A
A
A
A
C
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
V
SC−88/SOT−363
(BR)DSS
−8 V
CASE 419B
STYLE 28
(Note: Microdot may be in either location)
D
G
S
2
1
1
ORDERING INFORMATION
TA
M
G
1
1
2
3
0.22 W @ −4.5 V
0.32 W @ −2.5 V
0.51 W @ −1.8 V
http://onsemi.com
SC−88 (6 LEADS)
R
DS(on)
SOT−363
= Device Code
= Date Code
= Pb−Free Package
Top View
MARKING DIAGRAM &
PIN ASSIGNMENT
TYP
Publication Order Number:
6
1
D1 G2 S2
S1 G1 D2
TA M G
G
6
5
4
NTJD2152/D
−0.775 A
I
D
Max
D
G
S
2
1
2

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NTJD2152PT1 Summary of contents

Page 1

NTJD2152P Trench Small Signal MOSFET 8 V, Dual P−Channel, SC−88 ESD Protection Features • Leading –8 V Trench for Low R DS(ON) • ESD Protected Gate • Small Footprint ( mm) • Same Package as SC−70−6 • Pb−Free ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...

Page 3

TYPICAL PERFORMANCE CURVES 1 −4 −2 −2 1.2 − 0.8 0.6 0.4 0 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.5 ...

Page 4

TYPICAL PERFORMANCE CURVES 5 Q G(TOT 0.4 0.8 1.2 1 TOTAL GATE CHARGE (nC) g Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge (T = 25°C ...

Page 5

... ORDERING INFORMATION Device Order Number NTJD2152PT1 NTJD2152PT1G NTJD2152PT2 NTJD2152PT2G NTJD2152PT4 NTJD2152PT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi- cations Brochure, BRD8011/D. Package Type SOT−363 SOT−363 (Pb−Free) SOT− ...

Page 6

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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