IRF7103Q International Rectifier, IRF7103Q Datasheet - Page 5

• Manufacturer Part Number: IRF7103Q
• Description: MOSFET N-CH 50V 3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7103Q

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 255pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3A
• Drain Source Voltage Vds: 50V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7103Q

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3.0
2.4
1.8
1.2
0.6
0.0
0.01
100
0.1
10
25
1E-006
Fig 9. Maximum Drain Current Vs.
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
50
D = 0.50
T , Case Temperature ( C)
Case Temperature
C
0.10
0.05
0.20
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
75
100
0.0001
125
°
150
t 1 , Rectangular Pulse Duration (sec)
0.001
175
0.01
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.1
t
d(on)
t
r
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
1
IRF7103Q
t
d(off)
10
t
f
+
-
5
100