IRF7379 International Rectifier, IRF7379 Datasheet - Page 2

• Manufacturer Part Number: IRF7379
• Description: MOSFET N+P 30V 4.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7379

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A, 4.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 520pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7379

Electrical Characteristics @ T
IRF7379
t
Source-Drain Ratings and Characteristics
Notes:
d(on)
V
R
V
g
I
Q
Q
Q
t
t
t
C
C
C
I
L
L
I
I
V
t
Q
r
d(off)
DSS
GSS
f
SM
rr
fs
D
S
V
S
(BR)DSS
DS(ON)
GS(th)
g
gd
iss
oss
rss
gs
SD
rr
Repetitive rating; pulse width limited by
(BR)DSS
N-Channel I
P-Channel I
2
max. junction temperature. ( See fig. 10 )
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Internal Drain Inductace
Internal Source Inductance
SD
SD
2.4A, di/dt
-1.8A, di/dt
Parameter
Parameter
73A/µs, V
90A/µs, V
DD
DD
J
= 25°C (unless otherwise specified)
V
V
(BR)DSS
(BR)DSS
N-Ch
P-Ch
N-Ch 30
P-Ch -30
N-Ch
P-Ch
N-Ch 1.0
P-Ch -1.0
N-Ch 5.2
P-Ch 2.5
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
, T
N-P
N-P
N-P
, T
J
J
Min. Typ. Max. Units
Min. Typ. Max. Units
150°C
––
— 0.032 —
— -0.037 —
— 0.038 0.045
— 0.055 0.075
— 0.070 0.090
— 0.130 0.180
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
150°C
520
440
180
200
6.8
7.7
4.0
6.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
11
21
17
22
25
18
72
93
47
53
56
66
—
—
—
—
—
—
±100
-1.0
-3.1
-1.0
1.0
-25
2.9
2.9
7.9
9.0
3.1
-34
1.0
25
25
25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
46
71
80
84
99
Pulse width
Surface mounted on FR-4 board, t
V/°C
nC
nH
µA
ns
pF
nC
ns
V
V
S
A
V
N-Channel
V
R
P-Channel
V
R
N-Channel
V
P-Channel
V
V
V
Reference to 25°C, I
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
V
V
N-Channel
I
P-Channel
I
Between lead, 6mm (0.25in.) from
package and center of die contact
T
T
N-Channel
T
P-Channel
T
D
D
DD
DD
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
GS
D
D
J
J
J
J
= 2.4A, V
= -1.8A, V
= 6.2
= 8.2
= 25°C, I
= 25°C, I
= 25°C, I
= 25°C, I
= 15V, I
= -15V, I
= 0V, V
= 0V, V
= 0V, I
= 0V, I
= 10V, I
= 4.5V, I
= -10V, I
= -4.5V, I
= V
= V
= 15V, I
= -24V, I
= 24 V, V
= -24V, V
= 24 V, V
= -24V, V
= ± 20V
300µs; duty cycle
GS
GS
, I
, I
D
D
DS
DS
DS
D
D
F
F
D
D
D
DS
S
S
= 250µA
= -250µA
D
D
D
D
GS
GS
D
GS
GS
= -1.8A, di/dt = -100A/µs
= -250µA
= 2.4A, di/dt = 100A/µs
= 5.8A
= 250µA
= 2.4A
= 2.4A, R
= 1.8A, V
= -1.8A, V
= 24V, V
= -1.8A, R
= 25V, ƒ = 1.0MHz
= -25V, ƒ = 1.0MHz
Conditions
= 4.9A
= -1.8A
=- 4.3A
= -24V, V
=- 3.7A
= 0V
= 0V, T
= 0V
= 0V, T
D
D
Conditions
= -1mA
= 1mA
GS
G
GS
J
J
GS
www.irf.com
GS
G
= 125°C
= 6.0 ,
= 125°C
= 10V
= 0V
= 6.0 ,
= 0V
= -10V
2%.
10sec.