UP0487800L Panasonic - SSG, UP0487800L Datasheet
UP0487800L
Manufacturer Part Number
UP0487800L
Description
MOSFET 2N-CH 50V .1A SS-MINI-6P
Manufacturer
Panasonic - SSG
Specifications of UP0487800L
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 Ohm @ 10mA, 4V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
100mA
Vgs(th) (max) @ Id
1.5V @ 1µA
Input Capacitance (ciss) @ Vds
12pF @ 3V
Power - Max
125mW
Mounting Type
Surface Mount
Package / Case
SSMini6-F1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
UP0487800LTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UP0487800L
Manufacturer:
PANASONIC
Quantity:
56 000
Part Number:
UP0487800L
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Composite Transistors
UP04878
Silicon N-channel MOSFET
For switching
■ Features
■ Basic Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Publication date: April 2005
• Allowing 2.5 V drive
• Incorporating a built-in gate protection-diode
• Reduction of the mounting area and assembly cost by one half
• 2SK3539 × 2
Drain-source surrender voltage
Gate-source voltage (Drain open)
Drain current
Peak drain current
Total power dissipation
Channel temperature
Storage temperature
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Short-circuit forward transfer
capacitance (Common-source)
Short-circuit output capacitance
(Common-source)
Reverse transfer capacitance
(Common-source)
Turn-on time
Turn-off time
Parameter
Parameter
Symbol
a
Symbol
V
R
V
= 25°C ± 3°C
Y
T
T
V
I
P
I
I
I
C
GSO
DS(on)
C
C
DSS
DP
V
t
DSS
GSS
t
D
stg
ch
a
T
DSS
off
on
oss
iss
rss
th
fs
= 25°C
−55 to +125
Rating
I
V
V
I
I
I
I
V
V
V
100
200
125
125
D
D
D
D
D
50
±7
DS
GS
DS
DD
DD
= 10 µA, V
= 1 µA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
SJJ00289BED
= 50 V, V
= ±7 V, V
= 3 V, V
= 3 V, V
= 3 V, V
Unit
mW
GS
GS
DS
mA
mA
Conditions
GS
°C
°C
V
V
GS
GS
GS
GS
GS
DS
= 0 V to 3 V, R
= 3 V to 0 V, R
= 3 V
= 0 V, f = 1 MHz
= 0
= 0
= 2.5 V
= 4.0 V
= 4.0 V
= 0
Marking Symbol: 7Y
Internal Connection
L
L
1: Source (FET1)
2: Gate (FET1)
3: Drain (FET2)
= 470 Ω
= 470 Ω
Display at No.1 lead
5˚
6
1
(0.50)(0.50)
(0.30)
1.00
1.60
5
2
±0.05
±0.05
4
3
Min
0.9
50
20
6
1
0.20
+0.05
–0.02
Typ
200
200
1.2
60
12
5
2
8
6
7
3
SSMini6-F1 Package
4
3
Max
4: Source (FET2)
5: Gate (FET2)
6: Drain (FET1)
5˚
0.10
1.0
1.5
±5
15
12
±0.02
Unit: mm
Unit
µA
µA
mS
pF
pF
pF
ns
ns
V
V
Ω
1
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