NDS9933 Fairchild Semiconductor, NDS9933 Datasheet

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NDS9933

Manufacturer Part Number
NDS9933
Description
MOSFET 2P-CH 20V 3.2A 8-SOIC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDS9933

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
110 mOhm @ 3.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 4.5V
Input Capacitance (ciss) @ Vds
870pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
NDS9933TR

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1999 Fairchild Semiconductor Corporation
NDS9933A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
This P-Channel enhancement mode power field ef-
fect transistor is produced using Fairchild’s propri-
etary, high cell density, DMOS technology. This very
high density process is especially tailored to mini-
mize on-state resistance and provide superior
switching performance.
These devices are particularly suited for low voltage
apllications such as DC motor control and DC/
DC conversion where fast switching,low in-line
power loss, and resistance to transients are
needed.
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
R
Package Outlines and Ordering Information
Symbol
D
DSS
GSS
D
J
, T
JA
JC
Device Marking
stg
NDS9933A
SO-8
D1
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D1
D2
D2
- Pulsed
- Continuous
S1
NDS9933A
Parameter
G1
Device
S2
G1
T
A
= 25°C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
High power and current handling capability in a
Dual MOSFET in surface mount package.
High density cell design for extremely low R
widely used surface mount package.
-2.8 A, -20 V. R
5
6
7
8
R
Tape Width
R
DS(on)
DS(on)
DS(on)
NDS9933A
-55 to +150
12mm
= 0.14
= 0.19
-2.8
= 0.20
-20
-10
1.6
0.9
78
40
2
1
8
@ V
@ V
@ V
3
1
4
2
GS
GS
GS
January 1999
= -4.5 V
= -2.7 V
Quantity
2500 units
= -2.5 V.
DS(on)
Units
C/W
C/W
W
NDS9933A Rev. A
V
V
A
C
.

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NDS9933 Summary of contents

Page 1

... A Parameter (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Device Reel Size NDS9933A 13’’ January 1999 = 0. -4.5 V DS(on 0. -2.7 V DS(on 0. -2.5 V. DS(on) GS DS(on NDS9933A Units - -2 1.6 1 0.9 -55 to +150 C 78 C/W 40 C/W Tape Width Quantity 12mm 2500 units NDS9933A Rev ...

Page 2

... Min Typ Max Units -20 V -25 mV 100 nA -100 nA -0.4 -0. mV/ C 0.10 0.140 5 0.240 =125 C J 0.15 0.190 0 0.200 0.13 5 0.14 0 -10 A 6.5 S 405 pF 170 6 8.5 nC 0.8 nC 1.3 nC -1.3 A -0.78 -1 135 C 0.003 in 2 pad of 2oz copper. NDS9933A Rev ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current -2.5 -2.7 -3.0 -3.5 -4.0 -4 DRAIN CURRENT ( -1. 125°C J 25° ,GATE TO SOURCE VOLTAGE ( 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD and Temperature. NDS9933A Rev 1.4 ...

Page 4

... Transient themal response will change depending on the circuit board design. C iss C oss C rss 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =135 °C 25°C A 0.1 0 100 SINGLE PULSE TIME (SEC) Power Dissipation. R ( 135°C/W JA P(pk ( Duty Cycle 100 300 NDS9933A Rev 300 ...

Page 5

SO-8 Tape and Reel Data and Package Dimensions SOIC(8lds) Packaging Configuration: Figure 1 SHI P OR STO RE N EAR ECT ROST ECT RO M AGN ETI ...

Page 6

... Dim A max 13" Diameter Option Reel Tape Size Dim A Dim B Option 7.00 0.059 12mm 7" Dia 177.8 1.5 13.00 0.059 12mm 13" Dia 330 1.5 1998 Fairchild Semiconductor Corporation User Direction of Feed Dimensions are in millimeter 1.55 1.60 1.75 10.25 5.50 8.0 +/-0 ...

Page 7

SO-8 Tape and Reel Data and Package Dimensions, continued SOIC-8 (FS PKG Code S1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0774 September 1998, Rev. ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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