NDM3000 Fairchild Semiconductor, NDM3000 Datasheet

MOSFET 3 PHASE MOTOR DVR SO16

NDM3000

Manufacturer Part Number
NDM3000
Description
MOSFET 3 PHASE MOTOR DVR SO16
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDM3000

Fet Type
3 N and 3 P-Channel (3-Phase Bridge)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
360pF @ 10V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
16-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDM3000TR

Available stocks

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Manufacturer
Quantity
Price
Part Number:
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Quantity:
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Part Number:
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Quantity:
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Part Number:
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Manufacturer:
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Quantity:
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Absolute Maximum Ratings
Symbol
V
V
I
P
T
________________________________________________________________________________
© 1997 Fairchild Semiconductor Corporation
D
J
DSS
GSS
D
NDM3000
3 Phase Brushless Motor Driver
General Description
The NDM3000 three phase brushless motor driver consists of
three N-Channel and P-Channel MOSFETs in a half bridge
configuration. These devices are produced using Fairchild's
proprietary, high cell density DMOS technology. This very high
density process is tailored to minimize on-state resistance
which reduces power loss, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage 3 phase motor driver such as
disk drive spindle motor control and other half bridge
applications.
,T
STG
Parameter
Drain-Source Voltage (All Types)
Gate-Source Voltage (All Types)
Drain Current Q1+Q4 or Q1+Q6 or Q3+Q2 -
Continuous Q3+Q6 or Q5+Q2 or Q5+Q4
- Pulsed
Total Power Dissipation
Q1+Q4 or Q1+Q6 or Q3+Q2 or
Q3+Q6 or Q5+Q2 or Q5+Q4
Operating and Storage Temperature Range
T
A
= 25°C unless otherwise noted
(Note 1b)
(Note 1c)
(Note 1a & 2)
(Note 1a)
11,14
1,16
4,13
8,9
3,6
10
12
15
2
5
7
Features
±3.0A, ±30V, 2.5W
High density cell design for extremely low R
High power and current handling capability.
Industry standard SOIC-16 surface mount package.
NDM3000
Q1
Q2
-55 to 150
± 3.0
± 30
± 20
± 10
2.5
1.6
1.4
Q3
Q4
DS(ON)
Q5
Q6
.
May 1996
NDM3000 Rev. E
Units
W
°C
V
V
A

Related parts for NDM3000

NDM3000 Summary of contents

Page 1

... NDM3000 3 Phase Brushless Motor Driver General Description The NDM3000 three phase brushless motor driver consists of three N-Channel and P-Channel MOSFETs in a half bridge configuration. These devices are produced using Fairchild's proprietary, high cell density DMOS technology. This very high density process is tailored to minimize on-state resistance ...

Page 2

... Q2, Q4 1.7 3 0.7 1.2 2.2 Q1, Q3, Q5 0.125 0.16 0.18 0.29 0.16 0.25 Q2, Q4, Q6 0.07 0.09 0.1 0.16 0.09 0.13 Q1, Q3, Q5 -10 Q2, Q4 Q1, Q3, Q5 375 Q2, Q4, Q6 360 Q1, Q3, Q5 245 Q2, Q4, Q6 260 Q1, Q3, Q5 130 Q2, Q4, Q6 105 NDM3000 Rev µA µ ...

Page 3

... A/µ Type Min Typ Max Units Q1, Q3 Q2, Q4 Q1, Q3 Q2, Q4 Q1, Q3 Q2, Q4 Q1, Q3 Q2, Q4 Q1, Q3 Q2, Q4, Q6 9.5 25 Q1, Q3, Q5 1.6 Q2, Q4, Q6 1.5 Q1, Q3 Q2, Q4, Q6 2.5 Q1, Q3, Q5 -1.2 Q2, Q4, Q6 1.2 Q1, Q3, Q5 -0.8 -1.3 Q2, Q4, Q6 0.8 1.3 All 100 is guaranteed NDM3000 Rev ...

Page 4

... GS -8.0 -7.0 -6.0 -5.5 -5.0 -4 DRAIN-SOURCE VOLTAGE (V) DS Characteristics. = -3.5V -4.0 -4.5 -5.0 -5 DRAIN CURRENT (A) D with Gate Voltage and Drain Current - -10V GS - 100 T , JUNCTION TEMPERATURE (°C) J with Temperature. -4.0 -3.5 -3.0 -5 -7.0 -8.0 -10 -15 125 150 NDM3000 Rev. E ...

Page 5

... Figure 12. P-Channel Gate Threshold Variation V = -10V 125°C J 25°C -55° - DRAIN CURRENT ( Drain Current and Temperature = -10V T = -55°C DS 25°C J 125° GATE TO SOURCE VOLTAGE (V) GS Figure 10. P-Channel Transfer Characteristics -250µ 100 T , JUNCTION TEMPERATURE (°C) J with Temperature. - 125 150 NDM3000 Rev. E ...

Page 6

... Figure 16. P-Channel Capacitance -3A 20V D 8 15V Figure 18. P-Channel Gate Charge Characteristics -250µ 100 T , JUNCTION TEMPERATURE (°C) J Variation with Temperature MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS Characteristics -10V GATE CHARGE (nC) g 125 150 C iss C oss C rss 30 -20V -15V 12 NDM3000 Rev. E ...

Page 7

... G S Figure 21 P-Channel Switching Test Circuit -10V T = -55° 25°C 4 125° Figure 20. P-Channel Transconductance Variation with Drain Current and Temperature. t d(on OUT DUT Figure 22 P-Channel Switching Waveforms T = -55°C J 25°C 125° DRAIN CURRENT ( d(off PULSE WIDTH -10 . NDM3000 Rev. E ...

Page 8

... Figure 26. P-Ch Typical Safe Operating Area 0.01 0 TIME (sec 4.5"x5" FR-4 PCB Ta = 25C Still Air Vgs = -10V 0.2 0.4 0.6 0.8 2 2oz COPPER MOUNTING PAD AREA ( ±10V GS = See Note 25° ±V , DRAIN-SOURCE VOLTAGE ( ( See Note 1c JA P(pk ( Duty Cycle NDM3000 Rev. E ...

Page 9

... Weight per unit (gm) 0.1437 0.1437 Weight per Reel (kg) 0.7735 - Note/Comments F63TNR Label sample LOT: CBVK741B019 QTY: 2500 FSID: NDM3000 SPEC: D/C1: D9842 QTY1: SPEC REV: D/C2: QTY2: CPN: N/F: F SOIC(16lds) Tape Leader and Trailer Configuration: Figure 2.0 Carrier Tape ...

Page 10

SOIC-16 Tape and Reel Data and Package Dimensions, continued SOIC(16lds) Embossed Carrier Tape Configuration: Figure 3 Pkg type SOIC(16lds) 6.60 10.35 16.0 +/-0.30 +/-0.25 +/-0.3 (16mm) Notes: A0, B0, and K0 dimensions ...

Page 11

SOIC-16 Tape and Reel Data and Package Dimensions, continued SOIC-16 (FS PKG Code S3) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.1437 October 1999, Rev. A1 ...

Page 12

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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