BSO303P Infineon Technologies, BSO303P Datasheet
BSO303P
Specifications of BSO303P
BSO303PT
SP000012622
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BSO303P Summary of contents
Page 1
... V =-24V, di/dt=200A/µ Gate source voltage Power dissipation T =25°C A Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev.1.2 Symbol puls E AS dv/dt =150°C jmax tot Page 1 BSO303P Product Summary V - DS(on Top View SIS00070 Value -8.2 -6 ...
Page 2
... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. Rev.1.2 Symbol R thJS R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) Page 2 BSO303P Values Unit min. typ. max K 110 - - 62.5 Values Unit min. typ. max. - ...
Page 3
... R =6Ω d(off =-24V, I =-8. =-24V, I =-8.2A -10V GS V (plateau) V =-24V, I =-8. =25° = =-15V /dt=100A/µ Page 3 BSO303P Values Unit min. typ. max 1761 - pF - 495 - - 410 - - 10.6 15 12.9 19.3 - 55.4 83 -4.25 -6 -15.2 -23 - -48.3 -72 -32.4 - -0.88 -1.32 - 24.4 36 12.8 19 ...
Page 4
... A 1 -10 0 -10 -1 - -10 -10 Rev.1.2 2 Drain current parameter: |V -10 A °C 100 120 160 Transient thermal impedance Z thJS parameter : K 90.0µs 100 µ - Page |≥ BSO303P - 100 = BSO303P single pulse - BSO303P 120 °C 160 0.50 0.20 0.10 0.05 0.02 0. 2002-01-08 ...
Page 5
... Rev.1.2 6 Typ. drain-source on resistance R DS(on) parameter: V 0.06 Vgs = -4.5V Ω Vgs = -4V 0.04 0.03 Vgs = -3.5V 0.02 Vgs = -3V 0.01 Vgs = -2. Typ. forward transconductance | f(I DS(on)max fs parameter µs 2 Page VGS = -3V VGS = -3. =25° BSO303P VGS = -4V VGS = -4.5V VGS = -5V VGS = -6V VGS = -8V VGS = -10V 2002-01-08 ...
Page 6
... GS(th) parameter -10 V 2.5 V 1.5 1 0.5 0 °C 100 160 - Forward character. of reverse diode parameter - iss 1 -10 C oss 0 -10 C rss -1 - Page 6 BSO303P = - 100 ) µs p BSO303P °C typ 150 °C typ °C (98 150 °C (98 -0.4 -0.8 -1.2 -1.6 -2 2002-01-08 98% typ. 2% °C 160 ...
Page 7
... DD GS 100 Drain-source breakdown voltage (BR)DSS j BSO303P -36 V -34 -33 -32 -31 -30 -29 -28 -27 -60 - Rev.1.2 14 Typ. gate charge V GS parameter: I 100 °C 150 T j 100 °C 180 T j Page Gate = -8.2 A pulsed D BSO303P -16 V - max 0 max -2 0 max BSO303P Gate 2002-01-08 ...
Page 8
... Rev.1.2 Page 8 BSO303P 2002-01-08 ...