AO4826 Alpha & Omega Semiconductor Inc, AO4826 Datasheet
AO4826
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AO4826 Summary of contents
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... AO4826 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4826 uses advanced trench technology to provide excellent R and low gate charge. This DS(ON) device is suitable for use as a load switch or in PWM applications. Standard Product AO4826 is Pb-free (meets ROHS & Sony 259 specifications). ...
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... AO4826 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO4826 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10V (Volts) DS Fig 1: On-Region Characteristics =4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd 3. = 1.5 2.2 2 1.8 1.6 1.4 =10V GS 1 1.0E+01 I =6.3A D 1.0E+00 125° ...
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... AO4826 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V DS I =6. (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 1s 1.0 10s T =150°C J(Max =25°C A 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA R =62.5°C/W θJA 1 0.1 0.01 ...