BSO207P Infineon Technologies, BSO207P Datasheet
BSO207P
Specifications of BSO207P
BSO207PNT
BSO207PT
BSO207PT
SP000012573
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BSO207P Summary of contents
Page 1
... V =-16V, di/dt=200A/µ Gate source voltage Power dissipation T =25°C A Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev.1.2 Symbol puls E AS dv/dt =150°C jmax tot Page 1 BSO207P Product Summary V - DS(on Top View SIS00070 Value -5.7 -4 ...
Page 2
... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. Rev.1.2 Symbol R thJS R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) Page 2 BSO207P Values Unit min. typ. max K 110 - - 62.5 Values Unit min. typ. max. - -0.6 -0 ...
Page 3
... C rss t V =-10V, V =-4.5V d(on =-1A, R =6Ω d(off =-15V, I =-5. =-15V, I =-5.7A -4. (plateau) V =-15V, I =-5. =25° = =-10V /dt=100A/µ Page 3 BSO207P Values Unit min. typ. max 1013 - pF - 388 - - 318 - - 9 13 -1.8 -2 -7.3 -11 - -15.6 -23 -22.8 - -0.88 -1. 12.3 15.4 nC 2001-11-20 ...
Page 4
... Drain current parameter: |V -6.5 A -5.5 -4.5 -3.5 -2.5 -1.5 -0.5 °C 100 120 160 Transient thermal impedance Z thJS parameter : K 57.0µs 10 100 µ - Page |≥ 4 BSO207P - 100 = BSO207P single pulse - BSO207P 120 °C 160 0.50 0.20 0.10 0.05 0.02 0. 2001-11-20 ...
Page 5
... Rev.1.2 6 Typ. drain-source on resistance R DS(on) parameter: V 150 mΩ [V] a -1.8 120 g b -1.9 110 c -2.0 d -2.1 100 e -2 -2 -2 Typ. forward transconductance | f(I DS(on)max fs parameter µ Page BSO207P [ -2.0 -2.1 -2.2 -2.3 -2.4 -2.5 -4 =25° BSO207P -10 - 2001-11-20 ...
Page 6
... Forward character. of reverse diode parameter -10 -10 C iss C oss -10 C rss - Page -40 µ 1.6 V 1.2 98% 1 0.8 typ. 0.6 0.4 2% 0.2 0 -60 - µ BSO207P °C typ 150 °C typ °C (98 150 °C (98 -0.4 -0.8 -1.2 -1.6 -2 BSO207P 100 °C 160 2001-11-20 ...
Page 7
... Drain-source breakdown voltage (BR)DSS j BSO207P -24.5 V -23.5 -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 - Rev.1.2 14 Typ. gate charge | = parameter 125 °C 165 100 °C 180 T j Page 7 BSO207P ) Gate = -5.7 A pulsed D 0.2 VDS max. 0.5 VDS max. 0.8 VDS max 2001-11- Gate | ...
Page 8
... Rev.1.2 Page 8 BSO207P 2001-11-20 ...