AO4611 Alpha & Omega Semiconductor Inc, AO4611 Datasheet
AO4611
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AO4611 Summary of contents
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... Complementary Enhancement Mode Field Effect Transistor General Description The AO4611 uses advanced trench technology MOSFETs to provide excellent R gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4611 is Pb-free (meets ROHS & Sony 259 specifications ...
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... AO4611 N Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD Maximum Body-Diode Continuous Current ...
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... AO4611 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 40 10V (Volts) DS Fig 1: On-Region Characteristics =4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd 3. = 1.5 2.2 2 1.8 1.6 1.4 =10V GS 1 1.0E+01 I =6. ...
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... AO4611 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 V =30V DS I =6. (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 1s 1.0 10s T =150°C J(Max =25°C A 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA R =62.5°C/W θJA 1 0.1 ...
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... AO4611 P-Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD Maximum Body-Diode Continuous Current ...
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... AO4611 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 25 -10V -4V - (Volts) DS Fig 1: On-Region Characteristics 50 V =-4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 125° 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 30 -3. - =-2. 1.8 1.6 1.4 1.2 ...
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... AO4611 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 V =-30V DS I =-4. (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C, T =25°C J(Max DS(ON) 10.0 limited 0.1s 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA R =62.5°C/W θ ...