UPA2757GR-E1-AT Renesas Electronics America, UPA2757GR-E1-AT Datasheet - Page 3

• Manufacturer Part Number: UPA2757GR-E1-AT
• Description: MOSFET N-CH DUAL 30V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA2757GR-E1-AT

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document No. G18206EJ2V0DS00 (2nd edition)
Date Published November 2007 NS
Printed in Japan
• Low on-state resistance
• Low gate charge
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
EQUIVALENT CIRCUIT
Remark
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
DESCRIPTION
Transistors designed for switching application.
FEATURES
Gate
Gate
Protection
Diode
The
R
R
Q
μ
μ
DS(on)1
DS(on)2
G
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
PA2757GR-E1-AT
PA2757GR-E2-AT
= 10 nC TYP. (V
(1/2 circuit)
μ
PART NUMBER
PA2757GR is Dual N-channel MOS Field Effect
= 36.0 mΩ MAX. (V
= 50.0 mΩ MAX. (V
caution for electrostatic discharge. V
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Source
Drain
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Body
Diode
GS
Note
Note
= 10 V)
GS
GS
= 10 V, I
= 4.5 V, I
LEAD PLATING
N-CHANNEL POWER MOS FET
Pure Sn
The mark <R> shows major revised points.
D
D
= 3.0 A)
= 3.0 A)
DATA SHEET
SWITCHING
ESD
± 600 V TYP. (C = 100 pF, R = 1.5 kΩ)
MOS FIELD EFFECT TRANSISTOR
Tape 2500
PACKING
p/reel
8
1
5.37 MAX.
PACKAGE DRAWING (Unit: mm)
0.40
μ
1.27
+0.10
–0.05
0.78 MAX.
PA2757GR
5
4
Power SOP8
PACKAGE
0.12 M
0.5 ± 0.2
6.0 ± 0.3
4.4
1
2
7, 8 : Drain 1
3
4
5, 6 : Drain 2
: Source 1
: Gate 1
: Source 2
: Gate 2
2006, 2007
0.8
0.10