AO8810 Alpha & Omega Semiconductor Inc, AO8810 Datasheet
AO8810
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AO8810 Summary of contents
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... AO8810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8810/L uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications ESD protected. AO8810 and AO8810L are electrically identical ...
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... AO8810 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO8810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V (Volts) DS Figure 1: On-Regions Characteristi =1. Figure 3: On-Resistance vs. Drain Current and Gate Voltage 125° 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd =1. = 0.0 cs 1.6 1.4 1.2 V =2.5V GS 1.0 V =4.5V 0 0.6 -50 Figure 4: On-Resistance vs. Junction Temperature ...
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... AO8810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =10V (nC) Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25° DS(ON) limited 10.0 0.1s 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA θJA R =83°C/W θ ...