AO4619 Alpha & Omega Semiconductor Inc, AO4619 Datasheet
AO4619
Specifications of AO4619
Available stocks
Related parts for AO4619
AO4619 Summary of contents
Page 1
... Complementary Enhancement Mode Field Effect Transistor General Description The AO4619 uses advanced trench technology MOSFETs to provide excellent R charge. The complementary MOSFETs may be used in inverter and other applications. SOIC-8 Top View Bottom View Pin1 Absolute Maximum Ratings T =25° C unless otherwise noted ...
Page 2
... AO4619 N-channel MOSFET Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
Page 3
... AO4619 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 10V (Volts) DS Figure 1: On-Region Characteristics =4. =10V (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 30 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS ...
Page 4
... AO4619 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS =15V DS I =7. (nC) g Figure 7: Gate-Charge Characteristics 100 10 R DS(ON) 1 limited 0.1 T =150° C J(Max) T =25° 0.01 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note =110° C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED ...
Page 5
... AO4619 P-cahnnel MOSFET Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
Page 6
... AO4619 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 -10V 35 - (Volts) DS Figure 1: On-Region Characteristics 100 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 160 140 120 100 125° THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 60 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS ...
Page 7
... AO4619 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V =-5. (nC) g Figure 7: Gate-Charge Characteristics 100 R DS(ON) 10 limited 1 T =150° C J(Max) T =25° 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note =110° C 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED ...