LKK47-06C5 IXYS, LKK47-06C5 Datasheet
Manufacturer Part Number
LKK47-06C5
Description
MOSFET DUAL 600V 47A ISOPLUS264
Specifications of LKK47-06C5
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 44A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
47A
Vgs(th) (max) @ Id
3.9V @ 3mA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 100V
Mounting Type
Through Hole
Package / Case
ISOPLUS264™
Configuration
Dual Common Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.045 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
47 A
Power Dissipation
480 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
47
Rds(on), Max, Tj=25°c, (?)
0.045
Ciss, Typ, (pf)
6800
Qg, Typ, (nc)
150
Trr, Max, (ns)
-
Trr, Typ, (ns)
600
Pd, (w)
278
Rthjc, Max, (k/w)
0.45
Visol, Rms, (v)
2500
Package Style
ISOPLUS264 (5 - Lead)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Lead Free Status / Rohs Status
Details
Available stocks
Dual CoolMOS
Common Source Topology
DCB isoated package
Symbol
V
V
V
I
I
E
E
Symbol
R
R
V
I
I
C
C
Q
Q
Q
t
t
t
t
R
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
MOSFET T1/T2
D25
D90
DSS
GSS
d(off)
d(on)
r
f
D1D2
GS
AS
AR
GSth
DSS
DSon
DSon
iss
oss
g
gd
thJC
thCH
gs
V
V
I
Conditions
T
T
T
T
single pulse
repetitive
Conditions
V
total between D1 and D2
V
V
V
V
V
f = 1 MHz
with heatsink compound
D
GS
GS
VJ
VJ
C
C
GS
G1S
DS
DS
GS
GS
= 44 A; R
= 25°C
= 90°C
= 0 to10 V; V
= 10 V; V
= 25°C
= 25°C
= V
= V
= 10 V; I
= ±20 V; V
= 0 V; V
= V
GS
DSS
G2S
; I
; V
D
= 10 V; I
G
DS
D
= 3 mA
DS
GS
= 3.3 Ω
= 44 A
= 100 V
DS
= 400 V;
= 0 V; T
I
DS
D
= 0 V
™ 1)
= 11 A; T
= 400 V; I
D
= 44 A
T
VJ
VJ
Power MOSFET
= 25°C
= 125°C
C
D
= 25°C
= 44 A
(T
Advanced Technical Information
VJ
= 25°C, unless otherwise specified)
min.
2.5
Characteristic Values
Maximum Ratings
6800
0.25
320
150
100
typ.
40
80
50
35
50
30
20
10
G2
D1
G1
D2
S
4
2
3
1
5
3
±600
1950
max.
0.45 K/W
600
±20
100
190
T1
T2
3.5
47
32
45 mΩ
10
3
K/W
mΩ
nC
nC
nC
mJ
mJ
µA
µA
nA
pF
pF
ns
ns
ns
ns
V
V
V
V
A
A
V
I
R
Features
• fast CoolMOS
• Enhanced total power density
Applications
• AC Switch
• Power factor correction (PFC)
• Push pull converter
D25
4
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped
- Low thermal resistance
- power regulation of AC heating
- light dimming
interleaved operation mode
DSS
DS(on) max
th
inductive switching (UIS)
due to reduced chip thickness
generation
1
2
1)
3
4
CoolMOS
Infineon Technologies AG.
5
LKK 47-06C5
™ 1)
= 600 V
= 47 A
= 45 mΩ Ω Ω Ω Ω
™
power MOSFET
is a trademark of
/ / / / / MOSFET
20090209b
1 - 4
Related parts for LKK47-06C5
LKK47-06C5 Summary of contents
... 400 3.3 Ω d(off thJC R with heatsink compound thCH IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved Advanced Technical Information Power MOSFET Maximum Ratings ±600 1950 = 25°C C Characteristic Values (T = 25°C, unless otherwise specified) VJ min ...
... P pins and mounting tab in the case pin - pin pin - backside metal S A Weight © 2009 IXYS All rights reserved Advanced Technical Information Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 44 0.9 1.2 600 = 400 V 17 ...
... V 100 5 4 [V] DS Fig. 1 Typ. output characteristics © 2009 IXYS All rights reserved Advanced Technical Information NOTE: 1.TAP 6 = ELECTRI C ALLY ISOLATED 2,500V F ROM THEOTHER PINS . 2. ALL LEADS ARE Pb FREE SOLDER DIPPE D . All curves for single MOSFET only 140 T = 150°C ...
... J 25 °C, 98 0.5 1 1.5 V [V] SD Fig. 6 Forward characteristic of reverse diode 2000 1500 1000 500 100 140 T [°C] j Fig. 9 Avalanche energy © 2009 IXYS All rights reserved Advanced Technical Information 0. 0.1 6 0.08 0. typ 0.04 0.02 0 100 -60 - 100 T [°C] j Fig. 4 Drain-source on-state resistance 12 ...
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