GWM160-0055X1-SL IXYS, GWM160-0055X1-SL Datasheet - Page 6

• Manufacturer Part Number: GWM160-0055X1-SL
• Description: IC FULL BRIDGE 3PH ISOPLUS STRT
• Manufacturer: IXYS

Specifications of GWM160-0055X1-SL

• Fet Type: 6 N-Channel (3-Phase Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 150A
• Vgs(th) (max) @ Id: 4.5V @ 1mA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Mounting Type: Surface Mount
• Package / Case: Through Hole
• Vdss, Max, (v): 55
• Id25, Tc = 25°c, (a): 150
• Id80, Tc = 80°c, (a): -
• Id90, Tc = 90°c, (a): 115
• Rds(on), Max, Tj = 25°c, (mohms): 3.3
• Tf, Typ, (ns): 120
• Tr, Typ, (ns): 125
• Rthjc, Max, (ºc/w): 1.0
• Package Style: ISOPLUS-DIL™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -

IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
0.6
0.5
0.4
0.3
0.2
0.1
0.0
50
40
30
20
10
V
V
I
0
D
200
200
GS
DS
Fig. 17
Fig. 13 Reverse recovery time t
Fig. 15 Reverse recovery charge Q
I
F
I
F
0.1 I
0.1 V
= 50 A
t
= 50 A
d(on)
100 A
160 A
160 A
100 A
D
0.9 I
400
400
GS
of the body diode vs. di/dt
of the body diode vs. di/dt
t
Definition of switching times
r
D
-di
600
600
-di
F
F
/dt [A/µs]
/dt [A/µs]
800
800
rr
1000
1000
V
T
V
T
J
J
R
R
= 125°C
= 125°C
0.9 V
= 24 V
= 24 V
rr
t
d(off)
GS
1200
1200
0.9 I
t
f
0.1 I
D
D
t
t
350
300
250
200
150
100
30
25
20
15
10
50
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
5
0
0
200
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
1
Fig. 14 Reverse recovery current I
Fig. 16 Source drain diode current I
Fig. 18 Typ. thermal impedance junction to
I
F
V
= 50 A
GS
100 A
T
= 0 V
160 A
J
400
= -25°C
heatsink Z
source drain voltage V
125°C
150°C
of the body diode vs. di/dt
25°C
10
GWM 160-0055X1
-di
600
F
V
t [ms]
thJH
/dt [A/µs]
SD
100
with heat transfer paste
[V]
800
SD
1000
1000
V
T
(body diode)
J
R
GWM 160-0055X1
= 125°C
RM
= 24 V
F
vs.
1200
20110307i
10000
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