GWM100-01X1-SMD IXYS, GWM100-01X1-SMD Datasheet - Page 6

• Manufacturer Part Number: GWM100-01X1-SMD
• Description: IC FULL BRIDGE 3PH ISOPLUS SMD
• Manufacturer: IXYS

Specifications of GWM100-01X1-SMD

• Fet Type: 6 N-Channel (3-Phase Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Mounting Type: Surface Mount
• Package / Case: Surface Mount
• Vdss, Max, (v): 100
• Id25, Tc = 25°c, (a): 90
• Id80, Tc = 80°c, (a): -
• Id90, Tc = 90°c, (a): 68
• Rds(on), Max, Tj = 25°c, (mohms): 8.5
• Tf, Typ, (ns): 55
• Tr, Typ, (ns): 95
• Rthjc, Max, (ºc/w): 1.0
• Package Style: ISOPLUS-DIL™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -

IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
70
60
50
40
30
20
10
V
V
I
0
D
200
200
GS
DS
Fig. 13 Reverse recovery time t
Fig. 15 Reverse recovery charge Q
Fig. 17
0.1 I
0.1 V
t
d(on)
400
400
D
0.9 I
GS
of the body diode vs. di/dt
of the body diode vs. di/dt
t
r
Definition of switching times
D
600
600
-di
-di
800 1000 1200 1400 1600
800 1000 1200 1400 1600
F
F
/dt [A/µs]
/dt [A/µs]
30 A
30 A
I
F
= 90 A
rr
V
T
V
T
60 A
60 A
J
J
R
R
0.9 V
I
= 125°C
= 125°C
rr
F
= 48 V
= 48 V
t
= 90 A
d(off)
GS
0.9 I
t
f
0.1 I
D
D
t
t
180
160
140
120
100
60
50
40
30
20
10
80
60
40
20
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
0
200
0.0
1
Fig. 14 Reverse recovery current I
Fig. 16 Source drain diode current I
Fig. 18 Typ. thermal impedance junction to
V
GS
400
0.2
= 0 V
heatsink Z
source drain voltage V
of the body diode vs. di/dt
10
600
0.4
T
-di
J
GWM 100-01X1
800 1000 1200 1400 1600
= -25°C
F
V
thJH
t [ms]
125°C
150°C
/dt [A/µs]
25°C
SD
0.6
100
with heat transfer paste
[V]
30 A
0.8
SD
1000
(body diode)
V
T
60 A
J
GWM 160-0055X1
R
RM
1.0
I
= 125°C
F
F
= 48 V
= 90 A
vs.
20110307e
10000
1.2
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