IXTL2X200N085T IXYS, IXTL2X200N085T Datasheet
IXTL2X200N085T
Manufacturer Part Number
IXTL2X200N085T
Description
MOSFET N-CH 85V ISOPLUS I5-PAK
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet
1.IXTL2X200N085T.pdf
(2 pages)
Specifications of IXTL2X200N085T
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
112A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
152nC @ 10V
Input Capacitance (ciss) @ Vds
7600pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
ISOPLUSi5-Pak™
Configuration
Dual Common Gate
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.006 Ohms
Drain-source Breakdown Voltage
85 V
Continuous Drain Current
2112 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
85
Id(cont), Tc=25°c, (a)
112
Rds(on), Max, Tj=25°c, (?)
0.0060
Ciss, Typ, (pf)
7600
Qg, Typ, (nc)
152
Trr, Typ, (ns)
55
Trr, Max, (ns)
-
Pd, (w)
150
Rthjc, Max, (k/w)
1.00
Package Style
ISOPLUS i5-Pak
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchMV
Power MOSFETs
Common-Gate Pair
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
All ratings and parametric values are per each MOSFET die unless otherwise specified.
© 2007 IXYS CORPORATION All rights reserved
DM
D25
LRMS
AR
GSS
DSS
L
SOLD
DGR
D
J
JM
stg
C
GS(th)
DSS
GSM
AS
ISOL
DS(on)
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
(Combined die total = 224 A)
Package Current Limit, RMS
(Combined die total = 150 A)
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
50/60 Hz, t = 1 minute, I
Mounting force
Test Conditions
V
V
V
V
V
S
V
C
C
C
C
C
GS
J
J
J
GS
DS
GS
DS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
≤ 175°C, R
= 25°C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
TM
DSS
, I
D
D
D
= 250 μA
= 250 μA
= 50 A, Notes 1, 2
G
DS
= 5 Ω
= 0 V
GS
ISOL
= 1 MΩ
Advance Technical Information
DD
< 1 mA, RMS
T
≤ V
J
= 150°C
DSS
IXTL2x200N085T
JM
Min.
20..120/4.5..25
2.0
85
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
Typ.
D
S
2500
± 20
112
540
150
300
260
175
1.0
85
85
75
25
3
9
R
± 200 nA
Max.
G
G
250 μA
4.0
6.0 m Ω
5 μA
N/lb.
V/ns
R
°C
°C
°C
°C
°C
G
W
V
V
V
A
V
V
V
A
A
A
g
J
D
S
Features
Advantages
Applications
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Easy to mount
Space savings
High power density
- Motor Drives
- 42V Power Bus
- ABS Systems
Primary Switch for 24V and 48V
DC/DC Converters and Off-line UPS
High Current Switching
V
I
R
Systems
Applications
D25
G = Gate
S = Source
Automotive
D
DS(on)
DSS
S
G
ISOPLUS i5-Pak
=
= 2x112
≤ ≤ ≤ ≤ ≤
S
D
D = Drain
6.0 mΩ Ω Ω Ω Ω
85
DS99751(01/07)
TM
Isolated back
surface
(IXTL)
A
V
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IXTL2X200N085T Summary of contents
Page 1
... DSS DS DSS Notes 1, 2 DS(on All ratings and parametric values are per each MOSFET die unless otherwise specified. © 2007 IXYS CORPORATION All rights reserved Advance Technical Information IXTL2x200N085T D S Maximum Ratings MΩ ± 20 112 75 540 JM 25 1.0 ≤ DSS 150 -55 ...
Page 2
... DSS D 42 0.50 Characteristic Values T = 25°C unless otherwise specified) J Min. Typ 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTL2x200N085T ISOPLUS i5-Pak TM Max. S Ω °C/W 1.0 °C/W Max. 200 A 540 A 1 Note: 1. TAB 6 - Electrically isolated from the other pins ...