IRF7324PBF International Rectifier, IRF7324PBF Datasheet - Page 3

• Manufacturer Part Number: IRF7324PBF
• Description: MOSFET 2P-CH 20V 9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7324PBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 5V
• Input Capacitance (ciss) @ Vds: 2940pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.018Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 9A
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF7324PBF

www.irf.com
1000
0.01
100
100
0.1
0.1
10
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
1
1
0.1
0.5
TOP
BOTTOM
T = 150 C
J
-V
-V
1.0
DS
VGS
-4.5V
-3.5V
-2.5V
-2.0V
-1.5V
-1.3V
-1.0V
-0.75V
GS
°
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25 C
J
1.5
-0.75V
1
°
2.0
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
DS
J
2.5
= -15V
10
°
3.0
3.5
100
1000
0.01
100
0.1
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
10
1
0.1
-60 -40 -20
Fig 4. Normalized On-Resistance
TOP
BOTTOM
I =
D
-V
-9.0A
DS
VGS
-4.5V
-3.5V
-2.5V
-2.0V
-1.5V
-1.3V
-1.0V
-0.75V
T , Junction Temperature ( C)
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
1
20 40 60 80 100 120 140 160
IRF7324PbF
-0.75V
20µs PULSE WIDTH
T = 150 C
J
10
°
V
°
GS
=
-4.5V
3
100