IRF7301PBF International Rectifier, IRF7301PBF Datasheet

MOSFET 2N-CH 20V 5.2A 8-SOIC

IRF7301PBF

Manufacturer Part Number
IRF7301PBF
Description
MOSFET 2N-CH 20V 5.2A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRF7301PBF

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 2.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.2A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 4.5V
Input Capacitance (ciss) @ Vds
660pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
N
Current, Drain
5.2 A
Package Type
SO-8
Polarization
N-Channel
Power Dissipation
2 W
Resistance, Drain To Source On
0.05 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Voltage, Breakdown, Drain To Source
20 V
Voltage, Gate To Source
±12 V
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.05Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Continuous Drain Current
5.2A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Module Configuration
Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
5.2A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
4.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7301PBF
Quantity:
67
l
l
l
l
l
l
l
l
θ

G2
G1
S2
S1
1
2
3
4
Top View
8
6
5
7
D1
D1
D2
D2
SO-8

Related parts for IRF7301PBF

IRF7301PBF Summary of contents

Page 1

Top View  ‚ „ Ω D2 SO-8 ...

Page 2

  ‚ ≤ ≤ ≤ ≤ J Ω ƒ ≤ „ ƒ ƒ ƒ Ω Ω, ƒ ƒ ƒ ≤ ≤ ...

Page 3

VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V 100 10 20µs PULSE WIDTH 1. 25° 0 Drain-to-Source Voltage (V) DS 100 T = 25° 150°C ...

Page 4

1MHz iss rss oss ds gd 900 C iss 600 C oss C 300 ...

Page 5

T , Case Temperature ( C) C 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 V DS 90% 10% ...

Page 6

Charge Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. 3mA Current Sampling Resistors + ...

Page 7

Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current Current D.U.T. V Waveform DS Diode Recovery Re-Applied Voltage Body Diode Inductor Curent Ripple ≤ ...

Page 8

SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010 NOT DIMENS IONING ...

Page 9

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...

Related keywords