FDD3510H Fairchild Semiconductor, FDD3510H Datasheet - Page 13

• Manufacturer Part Number: FDD3510H
• Description: IC MOSFET DUAL N/P 80V DPAK-4
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD3510H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 4.3A, 2.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 40V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (4 leads + tab)
• Configuration: Dual Common Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V @ Q1
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A @ Q1 or 2.8 A @ Q2
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD3510HTR

Highly Integrated Green-Mode PWM Controller
8PINS-SOP(S)
Dimensions
© System General Corp.
Version 1.0.1 (IAO33.0083.B0)
Symbol
A
A1
b
c
D
E
e
F
H
L
θ˚
8
1
Millimeter
Min.
1.346
0.101
4.648
3.810
1.016
5.791
0.406
0°
b
D
5
4
e
Typ.
0.406
0.203
1.270
0.381X45°
A1
E
A
H
Max.
1.752
0.254
4.978
3.987
1.524
6.197
1.270
8°
- 13 -
Θ
Inch
Min.
0.053
0.004
0.183
0.150
0.040
0.228
0.016
0°
F
www.sg.com.tw • www.fairchildsemi.com
C
Typ.
0.016
0.008
0.050
0.015X45°
L
Max.
0.069
0.010
0.196
0.157
0.060
0.244
0.050
8°
Product Specification
September 24, 2007
SG6742