SI1553DL-T1 Vishay, SI1553DL-T1 Datasheet - Page 7

• Manufacturer Part Number: SI1553DL-T1
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1553DL-T1

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 385 mOhm @ 660ma, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 660mA, 410mA
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 1.2nC @ 4.5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 660mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 995mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 71078
S-21374—Rev. D, 12-Aug-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
0.01
0.1
0.1
2
1
2
1
10
10
- 4
- 4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Single Pulse
10
- 3
10
- 3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
- 2
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
- 2
10
- 1
10
1
- 1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
= P
t
Vishay Siliconix
2
DM
Z
thJA
100
thJA
t
t
1
2
(t)
= 400_C/W
Si1553DL
P−CHANNEL
www.vishay.com
600
10
2-7