AO6800 Alpha & Omega Semiconductor Inc, AO6800 Datasheet - Page 3

• Manufacturer Part Number: AO6800
• Description: MOSFET DUAL N-CH 30V 3.4A 6-TSOP
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO6800

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 4.96nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 390pF @ 15V
• Power - Max: 1.15W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1081-2

Rev 5: December 2010
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
6
3
0
80
70
60
50
40
30
140
120
100
80
60
40
20
0
0
10V
0
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 3: On-Resistance vs. Drain Current and
Fig 1: On-Region Characteristics (Note E)
25° C
1
2
2
3V
4.5V
V
Gate Voltage (Note E)
GS
=2.5V
V
V
2
V
4
GS
GS
4
DS
V
=4.5V
=10V
(Note E)
(Volts)
GS
I
D
(A)
(Volts)
6
3
6
125° C
V
GS
=2.0V
2.5V
8
I
4
D
8
=3.4A
www.aosmd.com
10
10
5
15
12
1.8
1.6
1.4
1.2
0.8
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
9
6
3
0
2
1
0
Figure 4: On-Resistance vs. Junction Temperature
0
40
Figure 2: Transfer Characteristics (Note E)
V
0.0
DS
Figure 6: Body-Diode Characteristics (Note E)
25
0.5
=5V
V
I
D
GS
=3A
0.2
=4.5V
125° C
50
1
Temperature (° C)
125° C
0.4
V
75
(Note E)
GS
V
I
D
V
(Volts)
GS
=3.4A
1.5
SD
=10V
(Volts)
100
0.6
25° C
2
125
0.8
25° C
V
I
D
GS
=2A
2.5
=2.5V
17
10
18
150
5
2
0
1.0
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AO6800
175
3
1.2