SI4567DY-T1-E3 Vishay, SI4567DY-T1-E3 Datasheet - Page 9

• Manufacturer Part Number: SI4567DY-T1-E3
• Description: MOSFET N/P-CH 40V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4567DY-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 4.1A, 3.6A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 355pF @ 20V
• Power - Max: 1.85W, 1.95W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.06 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 4.1 A @ N Channel or 3.6 A @ P Channel
• Power Dissipation: 1850 mW @ N Channel or 1950 mW @ P Channel
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Module Configuration: Dual
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 48mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.2V
• Power Dissipation Pd: 2.75W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4567DY-T1-E3TR

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73426
S09-0393-Rev. C, 09-Mar-09
- 0.2
- 0.3
- 0.1
0.01
0.0
0.5
0.4
0.3
0.2
0.1
0.1
10
20
1
- 50
0.00
- 25
Source-Drain Diode Forward Voltage
0.2
V
T
SD
J
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
0.4
- Temperature (°C)
2 5
5 0
0.6
I
D
= 250 µA
7 5
0.8
0.01
100
T
0.1
10
100
J
1
0.1
= 25 °C
I
D
= 5 mA
Limited by R
* V
1.0
Safe Operating Area, Junction-to-Ambient
125
GS
> minimum V
V
150
1.2
DS
DS(on)
- Drain-to-Source Voltage (V)
Single Pulse
1
T
*
A
GS
= 25 °C
at which R
DS(on)
10
80
64
48
32
16
0.5
0.4
0.3
0.2
0.1
0.0
0
0.001
is specified
2
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 m s
10 ms
100 ms
1 s
10 s
DC
3
T
A
= 25 °C
100
0.01
V
4
GS
- Gate-to-Source Voltage (V)
5
T ime (s)
T
0.1
Vishay Siliconix
A
6
= 125 °C
7
Si4567DY
I
D
www.vishay.com
= 3.6 A
1
8
9
10
10
9