2N7002DW Fairchild Semiconductor, 2N7002DW Datasheet

MOSFET N-CH 60V 115MA SC70-6

2N7002DW

Manufacturer Part Number
2N7002DW
Description
MOSFET N-CH 60V 115MA SC70-6
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of 2N7002DW

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 Ohm @ 50mA, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
115mA
Vgs(th) (max) @ Id
2V @ 250µA
Input Capacitance (ciss) @ Vds
50pF @ 25V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7.5 Ohm @ 5 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.115 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2N7002DWTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N7002DW
Manufacturer:
FSC
Quantity:
39 000
Part Number:
2N7002DW
Manufacturer:
DIODES/美台
Quantity:
20 000
Company:
Part Number:
2N7002DW
Quantity:
24 000
Company:
Part Number:
2N7002DW
Quantity:
15 000
Company:
Part Number:
2N7002DW H6327
Quantity:
4 800
Part Number:
2N7002DW L6327
Manufacturer:
Infineon Technologies
Quantity:
1 788
Part Number:
2N7002DW-7-F
Manufacturer:
DIODES
Quantity:
36 000
Part Number:
2N7002DW-7-F
Manufacturer:
DIO
Quantity:
255 000
Part Number:
2N7002DW-7-F
Manufacturer:
DIODES
Quantity:
2 774
Part Number:
2N7002DW-7-F
Manufacturer:
DIODES
Quantity:
120
Part Number:
2N7002DW-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Company:
Part Number:
2N7002DW-7-F
Quantity:
5 000
Company:
Part Number:
2N7002DW-7-F
Quantity:
120 000
Part Number:
2N7002DW-TP
Manufacturer:
MCC原装
Quantity:
20 000
Part Number:
2N7002DW1T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
2N7002DWA-7
Manufacturer:
DIODES/美台
Quantity:
20 000
© 2007 Fairchild Semiconductor Corporation
2N7002DW Rev. A
2N7002DW
N-Channel Enhancement Mode Field Effect Transistor
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, Minimun land pad size,
V
V
V
I
T
P
R
D
J ,
DSS
DGR
GSS
D
Symbol
Symbol
θJA
T
STG
Drain-Source Voltage
Drain-Gate Voltage R
Gate-Source Voltage
Drain Current
Junction and Storage Temperature Range
Total Device Dissipation
Derating above T
Thermal Resistance, Junction to Ambient *
A
SC70-6
= 25°C
GS
Parameter
Parameter
(SOT363)
1.0MΩ
Marking : 2N
T
a
= 25°C unless otherwise noted
Continuous @ 100°C
Pulsed
Continuous
1
Pulsed
Continuous
1
1
-55 to +150
Value
Value
±20
±40
115
800
200
625
1.6
60
60
73
mW/°C
Units
Units
www.fairchildsemi.com
October 2007
°C/W
mW
mA
°C
V
V
V

Related parts for 2N7002DW

2N7002DW Summary of contents

Page 1

... Total Device Dissipation D Derating above T = 25° Thermal Resistance, Junction to Ambient * θJA * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, Minimun land pad size, © 2007 Fairchild Semiconductor Corporation 2N7002DW Rev. A (SOT363 Marking : 25°C unless otherwise noted a Parameter ≤ 1.0MΩ ...

Page 2

... Output Capacitance oss C Reverse Transfer Capacitance rss Switching Characteristics t Turn-On Delay Time D(ON) t Turn-Off Delay Time D(OFF) Note1 : Short duration test pulse used to minimize self-heating effect © 2007 Fairchild Semiconductor Corporation 2N7002DW Rev 25°C unless otherwise noted C Test Condition V = 0V, I =10uA 60V ...

Page 3

... J Figure 5. Transfer Characteristics 1 - 10V 0.6 0.4 0.2 0 GATE-SOURCE VOLTAGE (V) GS © 2007 Fairchild Semiconductor Corporation 2N7002DW Rev. A Figure 2. On-Resistance Variation with Gate 3.0 2.5 4V 2 Figure 4. On-Resistance Variation with 50 100 150 o C) Figure 6. Gate Threshold Variation with 2.5 o 150 C 2 ...

Page 4

... Typical Performance Characteristics Figure 7. Reverse Drain Current Variation with Diode Forward Voltage and Temperature 150 C 100 0.0 0.2 0 Body Diode Forward Voltage [V] SD © 2007 Fairchild Semiconductor Corporation 2N7002DW Rev. A Figure 8. Power Derating 280 240 200 160 120 o - 0.6 0.8 1 100 ...

Page 5

... Package Dimensions © 2007 Fairchild Semiconductor Corporation 2N7002DW Rev. A SC70-6 ( SOT-363 ) 5 www.fairchildsemi.com ...

Page 6

... Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation 2N7002DW Rev. A Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...

Related keywords