BSR57 Fairchild Semiconductor, BSR57 Datasheet
BSR57
Manufacturer Part Number
BSR57
Description
IC AMP N-CHAN 40V 20MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BSR57.pdf
(3 pages)
Specifications of BSR57
Current - Drain (idss) @ Vds (vgs=0)
20mA @ 15V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
40V
Voltage - Cutoff (vgs Off) @ Id
2V @ 0.5nA
Resistance - Rds(on)
40 Ohm
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Power - Max
250mW
Channel Type
N
Configuration
Single
Gate-source Voltage (max)
-40V
Drain-gate Voltage (max)
40V
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Transistor Polarity
N-Channel
Power Dissipation
250 mW
Gate-source Breakdown Voltage
- 40 V
Drain Current (idss At Vgs=0)
0.03 mA to 0.09 mA
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
40 V
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSR57
Manufacturer:
ON/安森美
Quantity:
20 000
©2003 Fairchild Semiconductor Corporation
N-Channel Low-Frequency Low-Noise
Amplifier
• This device is designed for low-power chopper or switching application
Absolute Maximum Ratings
Electrical Characteristics
V
V
I
P
T
T
BV
I
I
V
V
r
C
t
t
t
GF
GSS
DSS
d
r
off
ds
sourced from process 51
STG
J
DGO
GSO
tot
GS
DS
rss
Symbol
(on)
GSS
Symbol
(on)
(off)
Gate-Source Voltage
Gate Reverse Current
Zero-Gate Voltage Drain Current
Gate-Source Cut-off Voltage
Drain-Source On Voltage
Drain-Source On Reverse
Reverse Transfer Capacitance
Delay Time
Rise Time
Turn-off Time
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Total Power Dissipation up to T
Storage Temperature Range
Junction Temperature
Parameter
T
C
=25 C unless otherwise noted
T
Parameter
C
=25 C unless otherwise noted
amb
BSR57
=40 C
V
V
V
V
V
V
V
V
I
D
DS
GS
DS
DS
GS
GS
DS
DD
= 10mA, V
= 0V, I
= 20V, V
= 15V, V
= 15V, I
= 0V, I
= 0V, I
= 0V, V
= 10V, V
Test Condition
C
D
D
GS
D
= 1.0 A
= 10mA
= 0
DS
GS
GS
GS
= 0.5nA
= 10V
(on) = 0V
(off) = 6.0V
= 0V
= 0V
1. Drain 2. Source 3. Gate
- 55 ~ 150
Min.
3
2.0
40
20
Value
- 40
250
150
40
50
Max.
100
1
1.0
6.0
0.5
5.0
6.0
4.0
40
50
SOT-23
Mark: M5
Rev. A, February 2003
2
Units
mW
mA
Units
mA
V
V
nA
pF
ns
ns
ns
C
C
V
V
V
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BSR57 Summary of contents
Page 1
... GS V (on) Drain-Source On Voltage DS r (on) Drain-Source On Reverse ds C Reverse Transfer Capacitance rss t Delay Time d t Rise Time r t Turn-off Time off ©2003 Fairchild Semiconductor Corporation BSR57 T =25 C unless otherwise noted C Parameter =40 C amb T =25 C unless otherwise noted C Test Condition 20V 15V, V ...
Page 2
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2003 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A, February 2003 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...