BF246B Fairchild Semiconductor, BF246B Datasheet
![IC AMP RF N-CH 30V TO-92](/photos/5/41/54198/to-92_pkg_sml.jpg)
BF246B
Manufacturer Part Number
BF246B
Description
IC AMP RF N-CH 30V TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.BF246B.pdf
(3 pages)
Specifications of BF246B
Current - Drain (idss) @ Vds (vgs=0)
60mA @ 15V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
25V
Voltage - Cutoff (vgs Off) @ Id
600mV @ 10nA
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Power - Max
625mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BF246B
Manufacturer:
Fairchild Semiconductor
Quantity:
1 930
©2005 Fairchild Semiconductor Corporation
BF246B Rev. A
BF246B
N-Channel Switch
• This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers.
• Sourced from process 51.
• See J111 for characteristics.
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may e impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Thermal Characteristics
V
V
I
T
Off Characteristics
V
I
V
On Characteristics*
I
P
R
R
GF
GSS
DSS
Symbol
J
DG
GS
(BR)GSS
GS(off)
D
Symbol
Symbol
θJC
θJA
, T
STG
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Zero-Gate Voltage Drain Current *
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
Parameter
Parameter
T
a
= 25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
1. Drain 2. Gate 3. Source
D G S
I
V
V
V
1
G
GS
DS
DS
= 1.0µA, V
= 15V, I
= 15V, V
= -15V, V
TO-92
Conditions
D
DS
GS
DS
= 10nA
= 0
= 0
= 0
-55 ~ 150
Value
Value
625
125
357
-25
5.0
25
50
Min.
-0.6
-25
60
Max
-14.5
-5.0
140
Units
Units
mW/°C
www.fairchildsemi.com
°C/W
°C/W
mW
mA
°C
V
V
Units
mA
nA
V
V
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BF246B Summary of contents
Page 1
... DSS Thermal Characteristics Symbol P Total Device Dissipation D R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2005 Fairchild Semiconductor Corporation BF246B Rev. A TO- Drain 2. Gate 3. Source T = 25°C unless otherwise noted a Parameter T = 25°C unless otherwise noted a Conditions I = 1.0µA, V ...
Page 2
... Mechanical Dimensions BF246B Rev. A TO-92 2 Dimensions in Millimeters www.fairchildsemi.com ...
Page 3
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete BF246B Rev. A IntelliMAX™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerEdge™ MICROCOUPLER™ PowerSaver™ MicroFET™ ...