SGP40N60UFTU Fairchild Semiconductor, SGP40N60UFTU Datasheet - Page 4

• Manufacturer Part Number: SGP40N60UFTU
• Description: IGBT HI PERFORM 600V 20A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of SGP40N60UFTU

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 160W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2002 Fairchild Semiconductor Corporation
Fig 9. Turn-Off Characteristics vs.
Fig 7. Capacitance Characteristics
Fig 11. Turn-On Characteristics vs.
1000
100
200
100
2500
2000
1500
1000
20
10
500
0
1
1
Ton
Common Emitter
V
I
T
T
C
Tr
C
C
Gate Resistance
CC
= 20A
10
= 25℃
= 125℃
Collector Current
= 300V, V
Collector - Emitter Voltage, V
15
GE
= ± 15V
Gate Resistance, R
Collector Current, I
Cies
Coes
Cres
20
10
25
Common Emitter
V
R
T
T
CC
G
C
C
= 25℃
= 125℃
= 10
= 300V, V
G
C
10
[ ]
30
Common Emitter
V
T
[A]
GE
C
CE
= 25℃
= 0V, f = 1MHz
[V]
GE
35
= ± 15V
100
Toff
Tf
Tf
200
40
30
Fig 8. Turn-On Characteristics vs.
Fig 10. Switching Loss vs. Gate Resistance
Fig 12. Turn-Off Characteristics vs.
2000
1000
1000
300
100
100
100
10
50
20
1
1
Toff
Toff
Common Emitter
V
I
T
T
Common Emitter
V
I
T
T
C
C
Gate Resistance
Tf
Tf
CC
C
C
Common Emitter
V
R
T
T
CC
C
C
= 20A
= 20A
10
CC
C
C
= 25℃
= 125℃
G
= 25℃
= 125℃
Collector Current
= 300V, V
= 300V, V
= 25℃
= 125℃
= 10
= 300V, V
15
GE
GE
GE
Gate Resistance, R
= ± 15V
Gate Resistance, R
= ± 15V
= ± 15V
Collector Current, I
20
10
10
25
G
G
C
[ ]
[ ]
30
[A]
35
100
100
Tr
Ton
Eoff
SGP40N60UF Rev. A1
Eon
Eon
Eoff
200
200
40