IRG7PH42U-EP International Rectifier, IRG7PH42U-EP Datasheet - Page 2

• Manufacturer Part Number: IRG7PH42U-EP
• Description: IGBT 1200V 90A TO-247AD
• Manufacturer: International Rectifier

Specifications of IRG7PH42U-EP

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 30A
• Current - Collector (ic) (max): 90A
• Power - Max: 385W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
 V
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ƒ Refer to AN-1086 for guidelines for measuring V
„ R
…
IRG7PH42UPbF/IRG7PH42U-EP
V
∆V
V
V
∆V
gfe
I
I
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
RBSOA
Electrical Characteristics @ T
Switching Characteristics @ T
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
(BR)CES
CE(on)
GE(th)
on
off
total
on
off
total
ies
oes
res
g
ge
gc
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 78A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
(BR)CES
2
GE(th)
CC
θ
is measured at T
= 80% (V
/∆TJ
/∆T
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
CES
), V
J
GE
of approximately 90°C.
= 20V, L = 22µH, R
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
= 10Ω
(BR)CES
safely.
Min.
1200
Min.
3.0
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FULL SQUARE
Typ.
Typ.
2105
1182
3287
3186
2153
5339
3338
700
157
229
310
162
124
-16
1.2
1.7
2.1
2.2
32
21
69
25
32
63
20
31
75
—
—
—
1
Max. Units
Max. Units
2374
1424
3798
±100
150
236
104
271
2.0
6.0
32
34
41
86
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mV/°C V
V/°C V
µA
nA
nC
pF
µJ
ns
µJ
ns
V
V
V
S
V
I
I
I
V
V
V
V
V
I
V
V
I
R
Energy losses include tail & diode reverse recovery
Diode clamp the same as IRG7PH42UDPbF
I
R
Energy losses include tail & diode reverse recovery
Diode clamp the same as IRG7PH42UDPbF
V
V
f = 1.0Mhz
V
Rg = 10Ω, V
C
C
C
C
C
C
I
C
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
GE
CC
CC
G
G
= 30A, V
= 30A, V
= 30A, V
= 30A
= 30A, V
= 30A, V
=10Ω, L=200µH, T
= 120A
= 10Ω, L = 200µH,T
= V
= V
= 50V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±20V
= 15V
= 600V
= 0V
= 30V
= 960V, Vp =1200V
Conditions
GE
GE
d
, I
, I
C
C
GE
GE
GE
CC
CC
C
C
CE
CE
C
GE
= 100µA
= 1mA (25°C-150°C)
= 1mA
= 1mA (25°C - 175°C)
= 15V, T
= 15V, T
= 15V, T
= 30A, PW = 80µs
= 600V, V
= 600V, V
= 1200V
= 1200V, T
= +20V to 0V, T
J
Conditions
J
J
J
= 175°C
J
GE
GE
= 25°C
= 150°C
= 175°C
= 25°C
J
=15V
= 15V
= 175°C
J
Ãd
d
=175°C
d
d
d
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