IXGX120N60C2 IXYS, IXGX120N60C2 Datasheet - Page 4

• Manufacturer Part Number: IXGX120N60C2
• Description: IGBT 600V 75A PLUS TO-247
• Manufacturer: IXYS
• Series: HiPerFAST™, Lightspeed 2™r

Specifications of IXGX120N60C2

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 100A
• Current - Collector (ic) (max): 75A
• Power - Max: 830W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 120
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 80
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.24
• Rthjc, Max, Igbt, (°c/w): 0.15
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

IXYS reserves the right to change limits, test conditions, and dimensions.
100.0
10.0
140
120
100
1.000
0.100
0.010
0.001
1.0
0.1
80
60
40
20
0
0.00001
0
0
f
= 1 MHz
20
5
Fig. 7. Transconductance
40
10
Fig. 9. Capacitance
0.0001
60
15
I
V
C
CE
- Amperes
80
20
- Volts
C res
C oes
100
25
Fig. 11. Maximum Transient Thermal Impedance
C ies
120
0.001
30
T
J
125ºC
= - 40ºC
25ºC
140
35
Pulse Width - Seconds
160
40
0.01
220
200
180
160
140
120
100
16
14
12
10
80
60
40
20
8
6
4
2
0
0
100
0
V
I
I
T
R
dv / dt < 10V / ns
Fig. 10. Reverse-Bias Safe Operating Area
C
G
CE
J
G
= 100A
= 10mA
= 125ºC
= 1 Ω
50
= 300V
200
100
0.1
Fig. 8. Gate Charge
300
Q
150
G
- NanoCoulombs
V
CE
200
400
- Volts
IXGK120N60C2
IXGX120N60C2
250
1
500
300
600
350
10
400
700