IXGT60N60C2 IXYS, IXGT60N60C2 Datasheet

IXGT60N60C2

Manufacturer Part Number

IXGT60N60C2

Description

IGBT 600V 75A TO-268

Manufacturer

IXYS

Series

HiPerFAST™r

Datasheet

1.IXGH60N60C2.pdf (5 pages)

Specifications of IXGT60N60C2

Igbt Type

Voltage - Collector Emitter Breakdown (max)

600V

Vce(on) (max) @ Vge, Ic

2.5V @ 15V, 50A

Current - Collector (ic) (max)

75A

Power - Max

480W

Input Type

Standard

Mounting Type

Surface Mount

Package / Case

TO-268

Vces, (v)

600

Ic25, Tc=25°c, Igbt, (a)

Ic90, Tc=90°c, Igbt, (a)

Ic110, Tc=110°c, Igbt, (a)

Vce(sat), Max, Tj=25°c, Igbt, (v)

2.5

Tfi, Typ, Tj=25°c, Igbt, (ns)

Eoff, Typ, Tj=125°c, Igbt, (mj)

1.2

Rthjc, Max, Igbt, (°c/w)

0.26

If, Tj=110°c, Diode, (a)

Rthjc, Max, Diode, (ºc/w)

Package Style

TO-268

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXGT60N60C2

Manufacturer:

Quantity:

9 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXGT60N60C2D1

Manufacturer:

IXS

Quantity:

6 000

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HiPerFAST

C2-Class High Speed IGBTs

Symbol

SSOA

(RBSOA)

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

Weight

Symbol

C25

C110

GES

CES

GEM

stg

GE(th)

CE(sat)

CES

CGR

GES

Test Conditions

Continuous

Transient

Clamped inductive load @

Mounting torque (TO-247)

Test Conditions

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C (limited by leads)

= 110°C

= 25°C, 1 ms

= 15 V, T

= 25°C

= 250 µA, V

= V

= 0 V

= 0 V, V

= 50 A, V

CES

= 125°C, R

= ±20 V

= 15 V

= V

IGBT

= 1 MΩ

≤

= 10 Ω

600V

= 25°C

= 150°C

= 25°C

= 125°C

= 25°C, unless otherwise specified)

Advance Technical Data

TO-247 AD

TO-268

IXGH 60N60C2

IXGT 60N60C2

min.

3.0

Characteristic Values

-55 ... +150

Maximum Ratings

typ.

2.1

1.8

1.13/10Nm/lb.in.

= 100

300

600

±20

±30

480

150

300

max.

±100

5.0

2.5

µA

°C

TO-247 AD

TO-268

G = Gate,

E = Emitter,

Features

Applications

Advantages

(IXGH)

(IXGT)

Very high frequency IGBT

Square RBSOA

High current handling capability

MOS Gate turn-on

- drive simplicity

PFC circuits

Uninterruptible power supplies (UPS)

Switched-mode and resonant-mode

power supplies

AC motor speed control

DC servo and robot drives

DC choppers

High power density

Very fast switching speeds for high

frequency applications

C25

fi typ

CES

CE(sat)

C = Collector,

TAB = Collector

= 600 V

DS99043A(09/03)

2.5 V

75 A

35 ns

C (TAB)

Related parts for IXGT60N60C2

IXGT60N60C2 Summary of contents

Page 1

... V GE(th CES CE CES ± GES CE(sat © 2003 IXYS All rights reserved Advance Technical Data IXGH 60N60C2 IXGT 60N60C2 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 300 = 10 Ω 100 G CM ≤ 600V 480 -55 ... +150 150 -55 ... +150 300 1.13/10Nm/lb.in. TO-247 AD ...

Page 2

... R thJC R (TO-247) thCK Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. ...

Page 3

... V - Volts CE Fig. 3. Output Characteristics @ 125 Deg 0 Volts CE Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter voltage 5 4.5 4 3 00A Volts GE © 2003 IXYS All rights reserved 200 2 0.9 0.8 5V 0.7 0.6 0.5 2.5 3 3.5 25 200 º 50A 25 25A 3.5 IXGH 60N60C2 IXGT 60N60C2 Fig ...

Page 4

... I - Amperes C Fig. 11. Gate Charge 300V 50A 0mA nanoCoulombs G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 200 on I off C º º 0000 1 000 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 ...

Page 5

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