IXGH31N60D1 IXYS, IXGH31N60D1 Datasheet - Page 2

• Manufacturer Part Number: IXGH31N60D1
• Description: IGBT 60A 600V TO-247AD
• Manufacturer: IXYS

Specifications of IXGH31N60D1

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.7V @ 15V, 31A
• Current - Collector (ic) (max): 60A
• Power - Max: 150W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic90, Tc=90°c, Igbt, (a): 31
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 400
• Eoff, Typ, Tj=125°c, Igbt, (mj): 12
• Rthjc, Max, Igbt, (°c/w): 0.83
• If, Tj=110°c, Diode, (a): 31
• Rthjc, Max, Diode, (ºc/w): 1.0
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

© 2000 IXYS All rights reserved
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol
V
I
t
R
RM
d(on)
d(off)
d(on)
d(off)
ri
fi
ri
fi
rr
fs
on
F
off
off
thCK
ies
oes
res
g
thJC
thJC
ge
gc
I
Pulse test, t £ 300 ms, duty cycle d £ 2 % T
I
V
I
F
F
F
R
= I
= I
= 1 A; -di/dt = 100 A/ms; V
= 100 V
Test Conditions
I
Pulse test, t £ 300 ms, duty cycle £ 2 %
Test Conditions
C90
C90
C
, V
, V
Inductive load, T
I
V
Remarks: Switching times may increase
for V
increased R
Inductive load, T
I
V
Remarks: Switching times may increase
for V
increased R
= I
V
I
C
C
C
GE
GE
CE
CE
CE
C90
= 0 V, -di
= 0 V,
= 25 V, V
= I
= I
= 0.8 V
= I
= 0.8 V
CE
CE
; V
C90
C90
(Clamp) > 0.8 • V
C90
(Clamp) > 0.8 • V
CE
, V
, V
, V
= 10 V,
CES
CES
GE
G
G
GE
GE
F
/dt = 100 A/ms
GE
= 15 V, V
= 15 V, L = 100 mH,
, R
= 15 V, L = 100 mH
, R
= 0 V, f = 1 MHz
G
G
J
J
R
= 25°C
= 125°C
= R
= R
= 30 V
off
off
CE
CES
CES
= 10 W
= 10 W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
Min. Recommended Footprint
(T
= 0.5 V
(T
, higher T
, higher T
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
T
CES
T
T
J
J
4,881,106
4,931,844
J
J
= 25°C
J
J
=100°C
= 25°C
= 150°C
or
or
min.
min.
10
Characteristic Values
Characteristic Values
5,017,508
5,034,796
1500
typ.
0.25
typ.
100
130
400
400
800
800
25
16
40
80
15
30
15
25
15
25
12
6
6
1
max.
max.
5,049,961
5,063,307
0.83 K/W
100
800
800
1.6
2.5
30
40
1 K/W
K/W
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
A
5,187,117
5,237,481
TO-247 AD (IXGH) Outline
TO-268AA (D
Dim.
Dim. Millimeter
A
A
A
b
b
C
D
E
E
e
H
L
L1
L2
L3
L4
5,486,715
5,381,025
A
B
C
D
E
F
G
H
J
K
L
M
N
2
1
2
1
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
15.75 16.26 0.610 0.640
13.80 14.00
15.85 16.05
18.70 19.10
Min. Max.
3.55 3.65 0.140 0.144
4.32 5.49 0.170 0.216
1.65 2.13 0.065 0.084
10.8 11.0 0.426 0.433
1.15
13.3
2.40
1.20
1.00
3.80
Min.
5.45 BSC
5.4
1.0
4.7
0.4
1.5 2.49 0.087 0.102
Millimeter
4.9
2.7
.02
1.9
IXGH 31N60D1
IXGT 31N60D1
0.25 BSC
.4
-
3
Max.
PAK)
6.2 0.212 0.244
4.5 -
1.4 0.040 0.055
5.3 0.185 0.209
0.8 0.016 0.031
1.45
13.6
2.70
1.40
1.15
4.10
5.1
2.9
.25
2.1
.65
Min.
.193
.106
.001
.045
.016
.543
.624
.524
.736
.094
.047
.039
.150
Inches
Min. Max.
.75
Inches
.215 BSC
.010 BSC
0.177
Max.
.201
.114
.010
.057
.026
.551
.632
.535
.752
.106
.055
.045
.161
.83
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