IXGH28N60BD1 IXYS, IXGH28N60BD1 Datasheet
IXGH28N60BD1
Specifications of IXGH28N60BD1
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IXGH28N60BD1 Summary of contents
Page 1
... GE(th CES CE CES ±20 V GES CE(sat) C C90 GE © 2003 IXYS All rights reserved IXGH 28N60BD1 IXGT 28N60BD1 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± Ω 0.8 V CES 150 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 300 6 4 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
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... RM F C90 100 -di/dt = 100 A/µ thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ 1500 170 ...
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... V - Volts CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 5 4 56A C 3.5 28A 14A 3 2 Volts G E © 2003 IXYS All rights reserved 240 200 9V 160 120 2.5 3 1.6 1.5 1.4 1.3 1.2 1.1 7V 1.0 0.9 0.8 5V 0.7 2 25ºC ...
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... I = 14A C 500 400 I = 28A C 300 200 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1 off C 8 ...
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... C 200 150 Degrees Centigrade J Fig. 15. Capacitance 10000 MHz 1000 100 Volts 0.5 0.1 1 © 2003 IXYS All rights reserved 56A 56A 105 115 125 C ies C oes C res Fig. 16. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXGH 28N60BD1 IXGT 28N60BD1 Fig. 14. Gate Charge ...
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... K/W 0.1 Z thJC 0.01 0.001 0.00001 0.0001 0.001 Fig. 18 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 1000 T = 100° 800 I = 60A ...