STGW30NC60WD STMicroelectronics, STGW30NC60WD Datasheet - Page 4

• Manufacturer Part Number: STGW30NC60WD
• Description: MOSFET N-CH 60A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW30NC60WD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5204-5; STGW30NC60WD

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
V
V
CASE
(BR)CES
CE(sat)
I
I
C
GE(th)
C
C
Q
Q
CES
GES
g
Q
oes
ies
res
fs
ge
gc
g
= 25 °C unless otherwise specified)
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Static electrical characteristics
Dynamic electrical characteristics
GE
GE
= 0)
= 0)
Parameter
Parameter
CE
= 0)
I
V
V
V
V
V
V
C
V
V
V
V
(see Figure 18)
GE
GE
CE
CE
CE
GE
CE
= 1 mA
GE
GE
CE
CE
= 15V, I
= V
= 600 V
= 600 V, T
= 15 V, I
= ±20 V
= 15 V
= 0
= 25 V, f = 1 MHz,
= 390 V, I
= 15 V,
GE
Test conditions
Test conditions
, I
,
C
I
C
C
C
= 20 A,T
= 20 A
= 250µA
= 20 A
C
C
= 125 °C
= 20 A,
C
= 125 °C
Min. Typ. Max. Unit
Min. Typ. Max. Unit
3.75
600
STGW30NC60WD
2080
17.5
175
102
2.1
1.8
15
52
47
± 100
5.75
140
250
2.5
1
mA
nC
nC
nC
µA
nA
pF
pF
pF
V
V
V
V
S