IRG4PC50FDPBF International Rectifier, IRG4PC50FDPBF Datasheet - Page 7

• Manufacturer Part Number: IRG4PC50FDPBF
• Description: IGBT W/DIODE 600V 70A TO247AC
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRG4PC50FDPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 15V, 39A
• Current - Collector (ic) (max): 70A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Capacitance, Gate: 4100 pF
• Current, Collector: 70 A
• Energy Rating: 3.9 mJ
• Package Type: TO-247AC
• Polarity: N-Channel
• Power Dissipation: 200 W
• Resistance, Thermal, Junction To Case: 0.64 °C/W
• Speed, Switching: 1 to 5 kHz (Hard Switching), >20 kHz (Resonant Mode)
• Voltage, Collector To Emitter Shorted: 600 V
• Voltage, Collector To Emitter, Saturation: 1.79 V
• Transistor Type: IGBT
• Dc Collector Current: 70A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *IRG4PC50FDPBF

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Fig. 14 - Typical Reverse Recovery vs. di
Fig. 16 - Typical Stored Charge vs. di
1500
1200
140
120
100
900
600
300
80
60
40
20
0
100
100
I = 2 5A
I = 50A
I = 25A
I = 10A
F
F
F
V = 2 0 0 V
T = 1 2 5 °C
T = 2 5 °C
F
R
J
J
I = 50A
F
di /dt - (A/µs)
d i /d t - (A /µ s )
f
f
V = 200V
T = 125°C
T = 25°C
R
J
J
I = 10A
F
f
/dt
f
/dt
1000
1000
Fig. 15 - Typical Recovery Current vs. di
10000
1000
100
100
10
Fig. 17 - Typical di
1
100
100
IRG4PC50FDPbF
V = 2 0 0 V
T = 1 2 5 °C
T = 2 5 °C
V = 2 0 0 V
T = 1 2 5 °C
T = 2 5 °C
I = 25A
R
J
J
R
J
J
F
I = 5 0A
F
d i /d t - (A /µ s)
d i /d t - (A /µ s )
I = 50A
F
f
f
(rec)M
I = 10A
F
/dt vs. di
I = 10A
F
f
/dt
I = 25A
F
f
/dt
1000
1000
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