IXGH20N60B IXYS, IXGH20N60B Datasheet - Page 2

IGBT 40A 600V TO-247AD

IXGH20N60B

Manufacturer Part Number
IXGH20N60B
Description
IGBT 40A 600V TO-247AD
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet

Specifications of IXGH20N60B

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
150W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
40A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
40
Ic90, Tc=90°c, Igbt, (a)
20
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
100
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.2
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGH20N60B
Manufacturer:
IXYS
Quantity:
15 500
Part Number:
IXGH20N60BD1
Manufacturer:
IXYS
Quantity:
15 500
Part Number:
IXGH20N60BU1
Manufacturer:
SANYO
Quantity:
673
© 2000 IXYS All rights reserved
Symbol
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Note 1: Switching times may increase for V
d(on)
d(off)
d(on)
d(off)
ri
fi
ri
fi
TO-268AA (D
fs
on
on
off
off
thCK
ies
oes
res
g
thJC
ge
gc
increased R
Test Conditions
I
Pulse test, t £ 300 ms, duty cycle £ 2 %
V
I
Note 1
Inductive load, T
I
V
Note 1
C
C
C
3
Inductive load, T
I
V
CE
C
CE
= I
= I
PAK)
CE
= I
= 25 V, V
= 0.8 V
C90
= I
C90
= 0.8 V
G
C90
, V
, V
C90
, V
; V
GE
GE
GE
CES
CES
= 15 V, V
= 15 V, L = 100 mH
CE
GE
= 15 V, L = 100 mH,
, R
= 10 V,
, R
= 0 V, f = 1 MHz
G
J
G
= R
J
= 125°C
= R
= 25°C
CE
off
off
= 0.5 V
= 10 W
= 10 W
CE
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
(Clamp) > 0.8 • V
(T
CES
J
Dim.
A
A
A
b
b
C
D
E
E
e
H
L
L1
L2
L3
L4
= 25°C, unless otherwise specified)
2
1
2
1
13.80 14.00
15.85 16.05
18.70 19.10
1.15
13.3
2.40
1.20
1.00
3.80
Min.
5.45 BSC
Millimeter
4.9
2.7
.02
1.9
4,881,106
4,931,844
0.25 BSC
.4
min.
Max.
1.45
13.6
2.70
1.40
1.15
4.10
5.1
2.9
.25
2.1
.65
Characteristic Values
9
CES
, higher T
5,017,508
5,034,796
1500
0.15
0.15
0.25
175
150
100
220
140
typ.
.193
.106
.001
.045
.016
.543
.624
.524
.736
.094
.047
.039
.150
Min. Max.
0.7
1.2
17
40
90
11
30
15
35
15
35
.75
Inches
.215 BSC
.010 BSC
.057
.551
.632
.535
.752
.106
.055
.045
.161
.201
.114
.010
.026
max.
.83
J
0.83 K/W
5,049,961
5,063,307
200
150
or
1.0 mJ
K/W
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
S
5,187,117
5,237,481
TO-247 AD (IXGH) Outline
Min. Recommended Footprint
Dim. Millimeter
5,486,715
5,381,025
A
B
C
D
E
F
G
H
J
K
L
M
N
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
15.75 16.26 0.610 0.640
Min. Max.
3.55 3.65 0.140 0.144
4.32 5.49 0.170 0.216
1.65 2.13 0.065 0.084
10.8 11.0 0.426 0.433
5.4
1.0
4.7
0.4
1.5 2.49 0.087 0.102
-
IXGH 20N60B
IXGT 20N60B
6.2 0.212 0.244
4.5 -
1.4 0.040 0.055
5.3 0.185 0.209
0.8 0.016 0.031
Min.
Inches
0.177
Max.
2 - 4

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