IRG4BC30SPBF International Rectifier, IRG4BC30SPBF Datasheet

IGBT STD 600V 34A TO220AB

IRG4BC30SPBF

Manufacturer Part Number
IRG4BC30SPBF
Description
IGBT STD 600V 34A TO220AB
Manufacturer
International Rectifier
Datasheets

Specifications of IRG4BC30SPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.6V @ 15V, 18A
Current - Collector (ic) (max)
34A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
34A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
100W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4BC30SPBF
Benefits
Absolute Maximum Ratings
Thermal Resistance
Features
Features
Features
Features
Features
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
www.irf.com
• Standard: optimized for minimum saturation
• Generation 4 IGBT design provides tighter
• Industry standard TO-220AB package
R
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
C
C
CM
LM
Generation 3
parameter distribution and higher efficiency than
STG
CES
GE
ARV
D
D
J
θJC
θCS
θJA
industry-standard Generation 3 IR IGBTs
voltage and low operating frequencies ( < 1kHz)
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Continuous Collector Current
Parameter
Parameter
G
n-channel
300 (0.063 in. (1.6mm) from case )
2.0 (0.07)
Typ.
0.50
–––
–––
C
E
10 lbf•in (1.1N•m)
-55 to + 150
TO-220AB
Max.
± 20
600
100
34
18
68
68
10
42
@V
V
CE(on) typ.
Max.
V
GE
–––
–––
1.2
80
CES
= 15V, I
= 600V
= 1.4V
C
4/17/2000
Units
= 18A
Units
g (oz)
°C/W
mJ
W
°C
V
A
V
1

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IRG4BC30SPBF Summary of contents

Page 1

Features Features Features Features Features • Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits ...

Page 2

IRG4BC30S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. ...

Page 3

rate d volta 0.1 Fig. ...

Page 4

IRG4BC30S 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02  SINGLE ...

Page 5

1MHz ies res oes ce gc 1500  C ies 1000  500 C oes ...

Page 6

IRG4BC30S  15.0 Ω 23Ohm 150 C ° 480V 15V 12.0 GE 9.0 6.0 3.0 0 Collector-to-emitter Current (A) C Fig ...

Page 7

L 50V Driver .T 80 Note the 50V pow er s upply, pulse w idth ...

Page 8

IRG4BC30S (. (. (. (. 6.47 (.255 ) 6.10 (.240 ) ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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