IXGT6N170 IXYS, IXGT6N170 Datasheet - Page 4

• Manufacturer Part Number: IXGT6N170
• Description: IGBT NPT 1700V 12A TO-268
• Manufacturer: IXYS

Specifications of IXGT6N170

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 4V @ 15V, 6A
• Current - Collector (ic) (max): 12A
• Power - Max: 75W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 1700
• Ic25, Tc=25°c, Igbt, (a): 12
• Ic90, Tc=90°c, Igbt, (a): 6
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4
• Tfi, Typ, Igbt, (ns): 290
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2
• Rthjc, Max, Igbt, (°c/w): 1.65
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
13
12
11
10
16
14
12
10
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
100
0
V
I
I
Fig. 9. Reverse-Bias Safe Operating Area
T
R
dV / dT < 10V / ns
C
G
CE
J
G
2
300
= 6A
= 10 mA
= 125ºC
= 33 Ω
= 850V
4
500
6
Fig. 7. Gate Charge
Q
700
G
V
- NanoCoulombs
8
CE
- Volts
900
10
1100
12
14
1300
16
1500
18
1700
20
1,000
100
10.0
10
1.0
0.1
1
0.0001
0
f = 1 MHz
5
Fig. 10. Maximum Transient Thermal
0.001
10
Pulse Width - Seconds
Fig. 8. Capacitance
15
0.01
Resistance
V
CE
- Volts
20
C ies
C oes
C res
0.1
25
IXGH 6N170
IXGT 6N170
30
1
35
10
40