IXGA48N60B3 IXYS, IXGA48N60B3 Datasheet

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IXGA48N60B3

Manufacturer Part Number
IXGA48N60B3
Description
IGBT 280A 600V TO-263AA
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGA48N60B3

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 32A
Current - Collector (ic) (max)
48A
Power - Max
300W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
280
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
48
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
116
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.30
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
GenX3
Medium speed low Vsat PT
IGBTs 5-40 kHz switching
Symbol
V
V
V
V
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol Test Conditions
(T
BV
V
I
I
V
© 2008 IXYS CORPORATION, All rights reserved
C110
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C unless otherwise specified)
Test Conditions
I
I
V
V
V
I
TM
T
T
Continuous
Transient
T
T
V
Clamped inductive load @ ≤ 600V
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)(TO-220)
TO-263
TO-220
TO-247
C
C
C
C
J
C
C
C
CE
GE
CE
GE
= 25°C to 150°C, R
= 25°C to 150°C
= 110°C
= 25°C
= 25°C, 1ms
= 250μA, V
= 250μA, V
= 32A, V
= 0V, V
= V
= 0V
= 15V, T
600V IGBT
CES
GE
GE
VJ
= ± 20V
= 15V, Note 1
GE
CE
= 125°C, R
= V
= 0V
GE
GE
= 1MΩ
G
T
= 5Ω
J
= 125°C
IXGA48N60B3
IXGP48N60B3
IXGH48N60B3
-55 ... +150
-55 ... +150
I
CM
Min.
Characteristic Values
1.13/10
600
3.0
Maximum Ratings
= 120
± 20
± 30
600
600
280
300
150
300
260
2.5
3.0
6.0
48
Typ.
±100 nA
Nm/lb.in.
250 μA
Max.
5.0
1.8
25 μA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
V
g
g
g
V
I
V
TO-263 (IXGA)
TO-220 (IXGP)
TO-247 (IXGH)
G = Gate
E = Emitter
Features
Advantages
Applications
C110
Optimized for low conduction and
switching losses
Square RBSOA
International standard packages
High power density
Low gate drive requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
G
C
G
C
E
E
≤ ≤ ≤ ≤ ≤ 1.8V
= 600V
= 48A
E
C
TAB = Collector
= Collector
(
(
(
DS99938A(05/08)
TAB
TAB
TAB
)
)
)

Related parts for IXGA48N60B3

IXGA48N60B3 Summary of contents

Page 1

... CES CE CES 0V ± 20V GES 32A 15V, Note 1 CE(sat © 2008 IXYS CORPORATION, All rights reserved IXGA48N60B3 IXGP48N60B3 IXGH48N60B3 Maximum Ratings 600 = 1MΩ 600 ± 20 ± 280 = 5Ω 120 G CM 300 -55 ... +150 150 -55 ... +150 300 260 1.13/10 2.5 3.0 6.0 Characteristic Values Min ...

Page 2

... CES 0.84 130 116 0. 1.71 190 157 1.30 0.25 0.50 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGA48N60B3 IXGP48N60B3 IXGH48N60B3 TO-247 (IXGH) Outline Max Dim. Millimeter ns Min. Max 4.7 A 2.2 2.54 200 2.2 2 200 ...

Page 3

... V = 15V GE 13V 9V 11V 7V 5V 1.6 2.0 2.4 2.8 200 180 T = 25ºC J 160 140 120 100 IXGA48N60B3 IXGP48N60B3 Fig. 2. Extended Output Characteristics @ 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature 1 15V GE 1.3 1.2 1.1 1.0 ...

Page 4

... IXYS reserves the right to change limits, test conditions and dimensions. 25ºC 125ºC 80 100 120 140 140 120 C ies 100 C oes C res Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXGA48N60B3 IXGP48N60B3 Fig. 8. Gate Charge 300V 40A 10mA ...

Page 5

... IXGA48N60B3 IXGP48N60B3 IXGH48N60B3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current 125ºC off 5Ω 15V 480V ...

Page 6

... IXYS reserves the right to change limits, test conditions and dimensions 30A 60A 105 115 125 IXGA48N60B3 IXGP48N60B3 IXGH48N60B3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on) 25ºC < T < 125º 5Ω 15V 480V 25º 125º Amperes C IXYS REF: G_48N60B3D1(56) 05-05-08 ...

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